APTGF660U60D4G Microsemi Power Products Group, APTGF660U60D4G Datasheet
APTGF660U60D4G
Manufacturer Part Number
APTGF660U60D4G
Description
IGBT 600V 860A 2800W D4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF660U60D4G.pdf
(3 pages)
Specifications of APTGF660U60D4G
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 800A
Current - Collector (ic) (max)
860A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
36nF @ 25V
Power - Max
2800W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
NPT IGBT Power Module
V
V
I
P
I
CM
CES
C
GE
D
5
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operation Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
4
Single switch
5
3
3
Parameter
2
APT website – http://www.advancedpower.com
2
1
1
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1100A@520V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) fast IGBT
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
1100
2770
600
825
660
±20
-
-
-
-
-
-
-
-
APTGF660U60D4
V
I
-
-
C
CES
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
= 660A @ Tc = 80°C
M6 connectors for power
M4 connectors for signal
= 600V
Unit
W
V
A
V
1 - 3
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APTGF660U60D4G Summary of contents
Page 1
Single switch NPT IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current CM V Gate – Emitter Voltage GE ...
Page 2
All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter on Voltage CE(on) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...
Page 3
Package outline APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 ...