APTGF400U120D4G Microsemi Power Products Group, APTGF400U120D4G Datasheet - Page 4

• Manufacturer Part Number: APTGF400U120D4G
• Description: IGBT 1200V 510A 2500W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF400U120D4G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 400A
• Current - Collector (ic) (max): 510A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 26nF @ 25V
• Power - Max: 2500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
200
160
120
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
80
40
0
0
0.00001
0
0
0
5
0
V
V
I
T
C
Output Characteristics (V
CE
GE
J
0.05
0.5
= 400A
0.3
0.1
0.9
0.7
= 125°C
6
= 600V
=15V
1
Gate Resistance (ohms)
Transfert Characteristics
4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
2
0.0001
8
8
V
T
V
T
CE
J
GE
=125°C
J
3
=25°C
(V)
(V)
T
9
J
12
=125°C
T
J
=25°C
Eoff
4
10
Eon
GE
Er
www.microsemi.com
=15V)
16
rectangular Pulse Duration (Seconds)
0.001
5
11
Single Pulse
20
12
6
IGBT
0.01
APTGF400U120D4G
1000
100
800
700
600
500
400
300
200
100
800
600
400
200
80
60
40
20
0
0
0
0
0
0
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
V
V
R
T
V
T
R
J
J
CE
GE
G
100 200 300 400 500 600 700 800
J
GE
G
0.1
= 125°C
= 125°C
=125°C
= 2.2 Ω
=2.2 Ω
= 600V
= 15V
=15V
300
1
Output Characteristics
2
600
I
V
C
V
V
CE
GE
CE
(A)
3
=20V
(V)
1
900
(V)
4
1200
V
V
GE
V
Eoff
GE
5
GE
=15V
Eon
=9V
=12V
Er
1500
10
6
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