APTGF350DU60G

Manufacturer Part NumberAPTGF350DU60G
DescriptionIGBT MODULE NPT DUAL SP6
ManufacturerMicrosemi Power Products Group
APTGF350DU60G datasheet
 


Specifications of APTGF350DU60G

Igbt TypeNPTConfigurationDual, Common Source
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 360A
Current - Collector (ic) (max)430ACurrent - Collector Cutoff (max)200µA
Input Capacitance (cies) @ Vce17.2nF @ 25VPower - Max1562W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual common source
NPT IGBT Power Module
C1
C2
Q1
G1
E1
E
G1
C1
E
E1
E2
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF350DU60G
V
I
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Q2
Non Punch Through (NPT) Fast IGBT
G2
-
-
E2
-
-
-
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
-
-
High level of integration
Benefits
Outstanding performance at high frequency
C2
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Max ratings
600
T
= 25°C
430
c
T
= 80°C
350
c
T
= 25°C
1225
c
±20
T
= 25°C
1562
c
T
= 150°C
800A @ 600V
j
www.microsemi.com
= 600V
CES
= 350A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
Unit
V
A
V
W
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APTGF350DU60G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF350DU60G V I Application • AC Switches • Switched Mode Power Supplies • ...

  • Page 2

    ... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF350DU60G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF350DU60G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.08 °C/W ...

  • Page 4

    ... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGF350DU60G =15V) Output Characteristics (V GE 1200 250µs Pulse Test < 0.5% Duty cycle T =25°C 1000 J 800 600 T =125°C J 400 200 360A ...

  • Page 5

    ... Eon, 720A 15V GE Eoff, 720A 125°C J Eoff, 360A 32 Eon, 360A Eoff, 180A 16 Eon, 180A Gate Resistance (Ohms) www.microsemi.com APTGF350DU60G Turn-Off Delay Time vs Collector Current 250 V =15V, 200 GE T =125°C J 150 V =15V, GE 100 T =25° 400V 1.25Ω 100 200 ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF350DU60G Reverse Bias Safe Operating Area 900 ...