APTGT450A60G Microsemi Power Products Group, APTGT450A60G Datasheet
APTGT450A60G
Specifications of APTGT450A60G
Related parts for APTGT450A60G
APTGT450A60G Summary of contents
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... 80°C 450 25°C 600 C ± 25°C 1750 150°C 900A @ 550V j www.microsemi.com APTGT450A60G V = 600V CES I = 450A @ Tc = 80°C C ® Technology - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT450A60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 450A T = 150°C C ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT450A60G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
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... (V) Reverse Bias Safe Operating Area 1000 Eoff 800 Eon 600 400 V Er 200 IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT450A60G Output Characteristics = 150° =13V V =19V =15V GE V =9V GE 0.5 1 1.5 2 2.5 3 3 300V Eoff = 15V = 1Ω ...
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... U.S and Foreign patents pending. All Rights Reserved. 1000 V =300V CE D=50% 800 R =1Ω =150°C J 600 T =85°C c 400 200 0 600 800 0 (A) Diode Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT450A60G Forward Characteristic of diode T =125° =150° =25°C J 0.4 0.8 1 ...