APTGT400A120D3G Microsemi Power Products Group, APTGT400A120D3G Datasheet

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APTGT400A120D3G

Manufacturer Part Number
APTGT400A120D3G
Description
IGBT MOD TRENCH PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT400A120D3G

Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 400A
Current - Collector (ic) (max)
580A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
29nF @ 25V
Power - Max
2100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
4
5
6
7
Power Module
Phase leg
Q1
Q2
Parameter
1
3
2
www.microsemi.com
Application
Features
Benefits
APTGT400A120D3G
T
T
T
T
T
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT Technology
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
-
-
-
-
-
-
-
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
CES
= 400A @ Tc = 80°C
= 1200V
800A @ 1100V
Max ratings
1200
2100
580
400
800
±20
C
of V
Unit
W
V
A
V
CEsat
1 - 5

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APTGT400A120D3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT400A120D3G Application • Welding converters 3 • Switched Mode Power Supplies • Uninterruptible Power Supplies • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGT400A120D3G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 400A T = 125°C C ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D3 Package outline A APTGT400A120D3G Min IGBT Diode 2500 -40 -40 -40 For terminals Heatsink M6 3 1° DÉTAIL A www.microsemi.com Typ ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 0.06 0.9 0.05 0.7 0.04 0.5 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGT400A120D3G =15V) GE 800 T T =125°C 600 J 400 200 Energy losses vs Collector Current 120 V ...

Page 5

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT400A120D3G 800 V ...

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