MKI50-06A7T IXYS, MKI50-06A7T Datasheet - Page 2

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MKI50-06A7T

Manufacturer Part Number
MKI50-06A7T
Description
IGBT H-BRIDGE 72A 600V E2PACK
Manufacturer
IXYS
Datasheet

Specifications of MKI50-06A7T

Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
72A
Current - Collector Cutoff (max)
600µA
Input Capacitance (cies) @ Vce
2.8nF @ 25V
Power - Max
225W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
72
Ic80, Tc = 80°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.9
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1.7
Rthjc, Max, Igbt, (k/w)
0.55
If25, Tc = 25°c, Diode, (a)
72
If80, Tc = 80°c, Diode, (a)
45
Rthjc, Max, Diode, (k/w)
1.19
Package Style
E2-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MKI50-06A7T
Manufacturer:
EUPEC
Quantity:
530
Symbol
I
I
V
I
t
R
Symbol
T
T
V
M
R
d
d
R
Weight
Symbol
R
B
© 2011 IXYS All rights reserved
Module
Diodes
F25
F80
RM
Temperature Sensor NTC (MKI ... A7T version only)
rr
VJ
stg
S
A
F
ISOL
thJC
pin-chip
thCH
25
25/50
d
Conditions
T
T
I
I
V
(per diode)
Conditions
I
Mounting torque (M5)
Creepage distance on surface
Strike distance in air
with heatsink compound
Conditions
T = 25°C
F
F
ISOL
C
C
R
= 50 A; V
= 30 A; di
= 25°C
= 80°C
= 300 V; V
≤ 1 mA; 50/60 Hz
GE
F
/dt = -500 A/µs; T
GE
= 0 V; T
= 0 V
T
VJ
VJ
= 25°C
= 125°C
VJ
= 125°C
min.
min.
min.
4.75
Characteristic Values
Characteristic Values
Characteristic Values
6
6
-40...+150
-40...+125
Maximum Ratings
Maximum Ratings
Dimensions in mm
(1 mm = 0.0394")
2.7 - 3.3
0.02
3375
180
typ.
typ.
typ.
1.6
1.3
5
25
90
2500
5.0
45
72
max.
max.
max.
1.19 K/W
5.25 kΩ
1.8
Nm
K/W
mm
mm
V~
°C
°C
ns
A
A
V
V
A
K
g
R
Typ. thermistor resistance versus
temperature
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
10000
1000
Equivalent Circuits for Simulation
100
Ω
C
C
C
C
0
th2
th1
th1
th2
= 1.252 J/K; R
= 0.116 J/K; R
V
= 0.201 J/K; R
= 0.88 J/K; R
V
0
25
0
= 0.82 V; R
= 0.89 V; R
MKI 50-06 A7
MKI 50-06 A7T
GE
50
= 15 V; T
th2
th2
th1
75
0
th1
0
= 28 m Ω
= 0.277 K/W
= 8 m Ω
= 0.131 K/W
= 0.973 K/W
= 0.42 K/W
J
= 125°C)
100
J
T
= 125°C)
125
20110119a
MUBW2006A7
2 - 4
C
150

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