MWI75-06A7T IXYS, MWI75-06A7T Datasheet
MWI75-06A7T
Specifications of MWI75-06A7T
Available stocks
Related parts for MWI75-06A7T
MWI75-06A7T Summary of contents
Page 1
... off MHz ies 300V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 600 ± 125° 120 ...
Page 2
... R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 140 85 Characteristic Values min. typ. = 25°C 1 125°C 1 125° ...
Page 3
... 0.0 0.5 1.0 1 Fig. 4 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 11V 125° 25°C VJ 2.0 V 2.5 150 100 50 = 125° 300V R = 60A MWI7506A7 0 800 1000 A/μs 20070912a ...
Page 4
... Fig. 12 Typ. transient thermal impedance 500 ns E off 400 t 300 t d(off) = 300V 200 = ±15V = 18Ω 100 = 125° 160 500 ns t d(off) 400 t E off 300 = 300V 200 CE = ±15V GE = 75A C 100 = 125° Ω diode IGBT MWI7506A7 20070912a ...