MWI75-12T7T IXYS, MWI75-12T7T Datasheet
MWI75-12T7T
Specifications of MWI75-12T7T
Related parts for MWI75-12T7T
MWI75-12T7T Summary of contents
Page 1
... MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved ...
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... I max. reverse recovery current RM t reverse recovery time rr E reverse recovery energy rec R thermal resistance junction to case thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Conditions T continuous transient ...
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... Weight Equivalent Circuits for Simulation Symbol Definitions V 0 IGBT Diode R 0 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Conditions T C Conditions I < 1 mA; 50/60 Hz ISOL with heatsink compound Conditions MWI 75-12T7T Ratings min ...
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... XXXXXXXXXX yywwa Logo UL Part name Date Code Data Matrix Marking on Product Delivering Mode Base Qty Ordering Code MWI75-12T7T MWI 75-12T7T 15 23, 24 21 13, 14 Dimensions 0.0394“) Detail X Detail Y Ø 2.1; l=6 ±1° 15° 1.2 ± 0.05 Ø ...
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... ± 4.7 Ω 125° [mJ [A] C Fig. 5 Typ.switching losses versus collector current impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 25°C VJ [A] 2.5 3.0 3.5 100000 10000 R [Ω] = 25° off mJ E rec ...
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... 600 rec 4 [mJ 1000 1200 1400 1600 di /dt [A/µs] F Fig. 11 Typ. recovery energy E IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Q rr [µC] 2.0 2.5 3.0 F 200 A 100 [ns] 1800 2000 2200 vs. di/dt RM ...