CM200DY-34A Powerex Inc, CM200DY-34A Datasheet - Page 3

• Manufacturer Part Number: CM200DY-34A
• Description: IGBT MOD DUAL 1700V 200A A SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DY-34A

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 49.4nF @ 10V
• Power - Max: 1980W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 1.98kW
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 1700V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA500K-01R
• Interface Circuit Ref Design: BG2A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CM200DY-34A
Dual IGBTMOD™ A-Series Module
200 Amperes/1700 Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
*4 Case temperature (T C ), and heatsink temperature (T f ) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
01/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
400
300
200
100
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
T
COLLECTOR-EMITTER VOLTAGE, V
V
j
= 25°C
GE
20V
GATE-EMITTER VOLTAGE, V
OUTPUT CHARACTERISTICS
=
2
4
COLLECTOR-EMITTER
I
C
= 80A
13
15
(TYPICAL)
(TYPICAL)
4
8
8
12
6
12
GE
I
I
C
C
11
, (VOLTS)
10
T
CE
= 400A
9
= 200A
j
16
8
, (VOLTS)
= 25
o
C
10
20
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
R G
10
10
10
0
5
4
3
2
1
3
2
1
SATURATION VOLTAGE CHARACTERISTICS
0
0
EMITTER-COLLECTOR VOLTAGE, V
V
CE
COLLECTOR-CURRENT, I
FORWARD CHARACTERISTICS
= 15V
T
T
100
j
j
COLLECTOR-EMITTER
= 25°C
= 125°C
1
FREE-WHEEL DIODE
Thermal Grease Applied*
(TYPICAL)
(TYPICAL)
200
2
Test Conditions
Per FWDi*
Per IGBT*
C
, (AMPERES)
300
T
T
3
EC
j
j
= 25°C
= 125°C
, (VOLTS)
4
4
400
4
4,
*
5
10
10
10
10
400
300
200
100
-1
0
2
1
0
10
0
-1
Min.
COLLECTOR-EMITTER VOLTAGE, V
2.4
V
—
—
—
V
GE
GE
GATE-EMITTER VOLTAGE, V
TRANSFER CHARACTERISTICS
= 10V
= 0V
T
T
4
j
j
CAPACITANCE VS. V CE
= 25°C
= 125°C
10
Typ.
—
—
—
—
0
(TYPICAL)
(TYPICAL)
8
12
0.063
Max.
0.11
10
24
—
GE
1
, (VOLTS)
C
C
C
CE
ies
oes
res
16
, (VOLTS)
°C/W
°C/W
°C/W
Units
10
Ω
20
2
3