APT38M50J Microsemi Power Products Group, APT38M50J Datasheet

APT38M50J

Manufacturer Part Number

APT38M50J

Description

MOSFET N-CH 500V 38A ISOTOP

Manufacturer

Microsemi Power Products Group

Series

POWER MOS 8™r

Datasheet

1.APT38M50J.pdf (4 pages)

Specifications of APT38M50J

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

100 mOhm @ 28A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

38A

Vgs(th) (max) @ Id

5V @ 2.5mA

Gate Charge (qg) @ Vgs

220nC @ 10V

Input Capacitance (ciss) @ Vds

8800pF @ 25V

Power - Max

357W

Mounting Type

Chassis Mount

Package / Case

ISOTOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT38M50JMP
APT38M50JMP

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

APT38M50J

Quantity:

145

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Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Symbol

Torque

Power MOS 8

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in ﬂyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

FEATURES

Isolation

• Fast switching with low EMI/RFI

• Low R

• Ultra low C

• Low gate charge

• Avalanche energy rated

• RoHS compliant

θ CS

θ JC

STG

DS(on)

Parameter

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

RMS Voltage

Package Weight

Terminals and Mounting Screws.

™

rss

is a high speed, high voltage N-channel switch-mode power MOSFET.

for improved noise immunity

(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)

N-Channel MOSFET

= 25°C

Microsemi Website - http://www.microsemi.com

= 25°C

= 100°C

TYPICAL APPLICATIONS

• PFC and other boost converter

• Buck converter

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Inverters

rss

"Miller" capaci-

2500

Min

-55

Single die MOSFET

ISOTOP

Ratings

500V, 38A, 0.10Ω Max

APT38M50J

Typ

0.15

1.03

29.2

1200

±30

175

APT38M50J

Max

0.35

357

150

1.1

"UL Recognized"

file # E145592

°C/W

in·lbf

Unit

N·m

°C

Related parts for APT38M50J

APT38M50J Summary of contents

Page 1

... Single switch forward • Flyback • Inverters = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT38M50J 500V, 38A, 0.10Ω Max "UL Recognized" file # E145592 ISOTOP ® D APT38M50J Single die MOSFET G S Ratings Unit 175 ±30 V 1200 Min Typ Max ...

Page 2

Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefﬁcient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefﬁcient GS(th Zero Gate Voltage Drain Current DSS ...

Page 3

V = 10V -55° 25° 125°C J NORMALIZED 10V @ 28A GS = 7,8 & 10V 4.5V V > MAX. DS ...

Page 4

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) * Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT38M50J I DM 13µs 100µs R ds(on) 1ms = T 150°C 10ms 25°C 100ms C Scaling for Different Case & ...

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