APT58M80J Microsemi Power Products Group, APT58M80J Datasheet - Page 4

• Manufacturer Part Number: APT58M80J
• Description: MOSFET N-CH 800V 58A SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT58M80J

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 58A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 570nC @ 10V
• Input Capacitance (ciss) @ Vds: 17550pF @ 25V
• Power - Max: 960W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT58M80JMI; APT58M80JMI

ISOTOP
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
®
is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
R ds(on)
I
DM
D = 0.9
0.7
0.3
0.1
0.5
0.05
r = 4.0 (.157)
Dissipated Power
13µs
(2 places)
100µs
1ms
10ms
100ms
DC line
(Watts)
SOT-227 (ISOTOP
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
7.8 (.307)
8.2 (.322)
T
J
(°C)
Dimensions in Millimeters and (Inches)
0.0767
0.0271
SINGLE PULSE
3.3 (.129)
3.6 (.143)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
®
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
) Package Outline
1.04
* Source
* Source
0.102
T
C
(°C)
1.95 (.077)
2.14 (.084)
Scaling for Different Case & Junction
Temperatures:
R ds(on)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
I
D
0.75 (.030)
0.85 (.033)
=
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
I
DM
EXT
Drain
Gate
I
D(T
Hex Nut M4
*
are the external thermal
(4 places)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
C
= 25
12.6 (.496)
12.8 (.504)
°
Note:
C)
Peak T J = P DM x Z θJC + T C
*(
13µs
100µs
T
J
Duty Factor D =
t
10ms
-
100ms
1
T
= Pulse Duration
25.2 (0.992)
25.4 (1.000)
C
)/125
t 1
t 2
t 1
/
t 2