APT19F100J Microsemi Power Products Group, APT19F100J Datasheet - Page 2

• Manufacturer Part Number: APT19F100J
• Description: MOSFET N-CH 1000V 19A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 8™r

Specifications of APT19F100J

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 460 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 8500pF @ 25V
• Power - Max: 460W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dynamic Characteristics
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C
5 C
6 R
∆V
∆V
Symbol
Symbol
Symbol
V
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
V
BR(DSS)
C
R
C
V
GS(th)
DS
o(cr)
o(er)
G
BR(DSS)
dv/dt
t
t
I
I
C
C
C
o(er)
V
DS(on)
GS(th)
o(cr)
Q
Q
d(on)
d(off)
I
I
DSS
GSS
Q
Q
g
I
SM
t
rrm
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
t
t
oss
SD
iss
rss
S
rr
less than V
fs
gd
gs
r
f
rr
g
is defined as a fixed capacitance with the same stored charge as C
is defined as a fixed capacitance with the same stored energy as C
/∆T
4
5
/∆T
J
J
J
= 25°C, L = 14.65mH, R
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
(Body Diode)
(BR)DSS,
use this equation: C
1
G
= 2.2Ω, I
3
o(er)
= -2.47E-7/V
AS
= 16A.
T
J
J
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
= 25°C unless otherwise specified
SD
di
DS
≤ 16A, di/dt ≤1000A/µs, V
SD
I
I
SD
^2 + 4.36E-8/V
SD
/
dt = 100A/µs
= 16A
= 16A
Reference to 25°C, I
V
Test Conditions
V
V
DS
GS
GS
V
R
V
GS
V
V
V
G
Test Conditions
Test Conditions
V
= 1000V
V
Resistive Switching
,
GS
3
GS
DD
= 0V
GS
= 0V
T
OSS
GS
DS
OSS
= 2.2Ω
T
J
= 0 to 10V
J
= V
= 125°C
= 0V
V
= 667V
= 0V
= 10V
= 50V
V
= 25°C, V
,
GS
with V
f = 1MHz
with V
DS
DS
V
DS
DS
6
,
,
= ±30V
,
= 500V
,
+ 8.44E-11.
I
,
,
V
T
T
T
T
T
T
D
I
,
D
= 0V to 667V
V
T
T
I
DS
J
J
J
J
J
J
I
,
DS
DS
D
D
I
= 250µA
D
GG
J
J
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 2.5mA
I
GS
D
= 16A
= 16A
= 25°C
= 125°C
D
DD
= 25V
G
= 16A
= 67% of V
= 67% of V
= 16A,
= 15V
= 250µA
= 0V
= 667V,
D
S
(BR)DSS
(BR)DSS
1000
Min
Min
Min
3
.
. To calculate C
8500
Typ
115
715
290
150
260
125
130
Typ
Typ
1.15
0.39
34
46
39
35
33
230
500
-10
13
35
11
15
4
o(cr)
1000
±100
Max
0.46
Max
Max
250
100
120
270
640
1.1
25
5
for any value of
mV/°C
V/°C
Unit
V/ns
Unit
Unit
µA
nA
nC
µC
pF
ns
ns
A
V
A
V
Ω
V
S