APT40N60JCU3 Microsemi Power Products Group, APT40N60JCU3 Datasheet

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APT40N60JCU3

Manufacturer Part Number
APT40N60JCU3
Description
MOSFET N-CH 600V 40A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT40N60JCU3.pdf (8 pages)

Specifications of APT40N60JCU3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
3.9V @ 1mA
Gate Charge (qg) @ Vgs
259nC @ 10V
Input Capacitance (ciss) @ Vds
7015pF @ 25V
Power - Max
290W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
IF
R
V
IF
V
E
E
I
I
P
DSon
I
DM
AR
RMS
ISOTOP
DSS
AR
AS
D
GS
A V
D
MOSFET Power Module
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
Super Junction
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
ISOTOP
S
®
Buck chopper
D
D
A
Parameter
A
S
www.microsemi.com
Duty cycle=0.5
Application
Features
Benefits
V
R
I
•
•
•
•
•
•
•
•
•
•
•
•
•
D
DSS
DSon
= 40A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
-
-
-
-
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
= 600V
= 70mΩ max @ Tj = 25°C
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
T
T
T
Tc = 80°C
c
c
c
= 25°C
= 80°C
= 25°C
®
Package (SOT-227)
APT40N60JCU3
DSon
Max ratings
1800
±20
600
120
290
40
30
70
20
30
39
1
C
of V
CEsat
Unit
mΩ
mJ
W
V
A
V
A
A
1 - 8

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APT40N60JCU3 Summary of contents

Page 1

... AR E Single Pulse Avalanche Energy AS IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT40N60JCU3 V = 600V DSS R = 70mΩ max @ Tj = 25°C DSon I = 40A @ Tc = 25°C D Application • ...

Page 2

... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy APT40N60JCU3 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V j ...

Page 3

... T = 25° 125° 30A 400V T = 125° di/dt =1000A/µs CoolMos Diode Single Pulse 0.001 0.01 0.1 Re ctangular Puls e Duration (Se conds ) www.microsemi.com APT40N60JCU3 Min Typ Max Unit 1.6 1.8 V 1.9 1.4 250 µA 500 160 130 nC 700 70 ns ...

Page 4

... T , Case Tem perature (°C) C Figure 6, DC Drain Current vs Case Temperature www.microsemi.com APT40N60JCU3 ...

Page 5

... APT40N60JCU3 www.microsemi.com ...

Page 6

... Typical Diode Performance Curve APT40N60JCU3 www.microsemi.com ...

Page 7

... APT40N60JCU3 www.microsemi.com ...

Page 8

... Anode Source Dimensions in Millimeters and (Inches) www.microsemi.com APT40N60JCU3 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) ...

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