APT10M11JVFR Microsemi Power Products Group, APT10M11JVFR Datasheet
APT10M11JVFR
Manufacturer Part Number
APT10M11JVFR
Description
MOSFET N-CH 100V 144A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet
1.APT10M11JVFR.pdf
(4 pages)
Specifications of APT10M11JVFR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
144A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
450nC @ 10V
Input Capacitance (ciss) @ Vds
10380pF @ 25V
Power - Max
450W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT10M11JVFR
Manufacturer:
IR
Quantity:
1 000
Part Number:
APT10M11JVFR
Quantity:
162
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
C
APT Website - http://www.advancedpower.com
DS
1
= V
C
= 25°C
• Avalanche Energy Rated
• Popular SOT-227 Package
> I
= 25°C
4
GS
GS
D(on)
2
DS
DS
, I
= ±30V, V
GS
D
(V
= V
= 0.8 V
x R
= 0V, I
= 2.5mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250µA)
GS
Max, V
= 0V)
®
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
= 125°C)
100V 144A 0.011Ω Ω Ω Ω Ω
C
®
= 25°C unless otherwise specified.
MIN
100
144
2
APT10M11JVFR
-55 to 150
ISOTOP
2500
TYP
±30
±40
100
144
576
450
300
144
3.6
G
50
®
0.011
1000
±100
MAX
250
"UL Recognized"
4
D
S
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
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APT10M11JVFR Summary of contents
Page 1
... 2.5mA APT Website - http://www.advancedpower.com 100V 144A 0.011Ω Ω Ω Ω Ω ® "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT10M11JVFR 100 144 576 ±30 ±40 450 3.6 -55 to 150 300 144 50 2500 MIN TYP MAX 100 144 ) 0 ...
Page 2
... T = 125° 25° 125° See MIL-STD-750 Method 3471 4 Starting ≤ [Cont.], 100V RECTANGULAR PULSE DURATION (SECONDS) APT10M11JVFR MIN TYP MAX 8600 10380 3200 4480 1180 1770 300 450 95 145 DSS 110 165 DSS MIN TYP MAX 144 576 1 ...
Page 3
... FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT10M11JVFR V GS =10 & 15V 7V 6V 5.5V 5V 4.5V 4V 0.5 1.0 1.5 2.0 2.5 , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ 0.5 I [Cont.] ...
Page 4
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT10M11JVFR C oss C iss C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25°C 0.4 ...