APT40M70JVFR Microsemi Power Products Group, APT40M70JVFR Datasheet

APT40M70JVFR

Manufacturer Part Number

APT40M70JVFR

Description

MOSFET N-CH 400V 53A SOT-227

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT40M70JVFR.pdf (4 pages)

Specifications of APT40M70JVFR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

70 mOhm @ 26.5A, 10V

Drain To Source Voltage (vdss)

400V

Current - Continuous Drain (id) @ 25° C

53A

Vgs(th) (max) @ Id

4V @ 2.5mA

Gate Charge (qg) @ Vgs

495nC @ 10V

Input Capacitance (ciss) @ Vds

8890pF @ 25V

Power - Max

450W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

• Popular SOT-227 Package

Symbol

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

• Avalanche Energy Rated

•

FAST RECOVERY BODY DIODE

, I

= ±30V, V

= 400V, V

= 320V, V

= 0V, I

= 2.5mA)

FREDFET

= 10V, 26.5A)

= 250µA)

= 0V)

= 0V, T

All Ratings: T

= 125°C)

APT40M70JVFR

400V 53A 0.070Ω Ω Ω Ω Ω

= 25°C unless otherwise specified.

400

MIN

APT40M70JVFR

-55 to 150

2500

TYP

±30

±40

400

212

450

300

3.6

ISOTOP

1000

±100

MAX

0.07

250

"UL Recognized"

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

Related parts for APT40M70JVFR

APT40M70JVFR Summary of contents

Page 1

... 2.5mA APT Website - http://www.advancedpower.com APT40M70JVFR 400V 53A 0.070Ω Ω Ω Ω Ω ® "UL Recognized" ® ISOTOP G = 25°C unless otherwise specified. C APT40M70JVFR 400 53 212 ±30 ±40 450 3.6 -55 to 150 300 53 50 2500 MIN TYP MAX 400 0.07 ...

Page 2

... T = 125° Starting T = +25° 1.78mH numbers reflect the limitations of the test circuit rather than the dt device itself RECTANGULAR PULSE DURATION (SECONDS) APT40M70JVFR MIN TYP MAX 7410 8890 1140 1600 450 675 330 495 40 60 DSS 127 190 16 32 ...

Page 3

... FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT40M70JVFR V GS =15V V GS =10V V GS =6V & 7V 5. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ 0.5 I [Cont =10V ...

Page 4

... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 APT40M70JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° ...

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