APTC80DA15T1G Microsemi Power Products Group, APTC80DA15T1G Datasheet

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... Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTC80DA15T1G = 150mΩ max @ Tj = 25°C Ultra low R DSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Max ratings Unit 800 110 ± ...

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... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC80DA15T1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 800V 125° 0V,V = 800V GS DS ...

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... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTC80DA15T1G Min Typ Max Transistor 0.45 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

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... I , Drain Current (A) D Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 6.5V 6V 5. =10V GS V =20V www.microsemi.com APTC80DA15T1G 0.1 1 Transfert Characteristics 100 V > I (on)xRDS(on)MAX DS D 250µs pulse test @ < 0.5 duty cycle =125° =25° =125° Gate to Source Voltage (V) ...

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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 1000 100 Drain to Source Voltage (V) DS APTC80DA15T1G ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 125 150 Maximum Safe Operating Area 1000 100 limited by R DSon 10 Single pulse 1 T =150°C ...

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... U.S and Foreign patents pending. All Rights Reserved. t d(off) t d(on off =533V DS D=50% ZVS R =2.5Ω =125° =75°C C www.microsemi.com APTC80DA15T1G Rise and Fall times vs Current =533V DS R =2.5Ω =125° L=100µ Drain Current (A) D Switching Energy vs Gate Resistance ...