APT5010JLLU3 Microsemi Power Products Group, APT5010JLLU3 Datasheet - Page 2

• Manufacturer Part Number: APT5010JLLU3
• Description: MOSFET N-CH 500V 41A SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT5010JLLU3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 4360pF @ 25V
• Power - Max: 378W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dynamic Characteristics
Chopper diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol
R
V
T
T
I
I
C
E
E
E
E
I
I
C
C
Q
Q
DS(on)
GS(th)
Q
I
RRM
RRM
DSS
d(off)
V
C
Q
Q
GSS
d(on)
T
T
RM
t
t
oss
iss
rss
off
off
gd
on
on
rr
rr
gs
g
r
f
T
F
rr
rr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Characteristic
Diode Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
All ratings @ T
j
Test Conditions
V
V
f = 1MHz
V
V
I
Resistive switching @ 25°C
V
V
I
R
Inductive Switching @ 25°C
V
I
Inductive Switching @ 125°C
V
I
Test Conditions
V
V
V
V
V
D
D
D
D
= 25°C unless otherwise specified
GS
GS
bus
bus
GS
DS
GS
Bus
GS
Bus
G
GS
GS
GS
=46A, R
=46A, R
= 41A @ T
= 41A @ T
www.microsemi.com
= 0.6Ω
= 0V,V
= 0V,V
Test Conditions
I
I
I
V
V
V
I
di/dt =100A/µs
I
V
di/dt =200A/µs
I
V
di/dt =1000A/µs
= 0V
= 25V
= 10V
= 15V
= 10V, I
= V
= ±20 V, V
= 330V, V
= 330V, V
= 250V
= 250V
F
F
F
F
F
F
=1A,V
R
R
R
R
R
= 30A
= 60A
= 30A
= 30A
= 30A
= 600V
= 600V
= 200V
= 400V
= 400V
DS
, I
G
G
DS
DS
=5Ω
=5Ω
D
R
D
= 500V
= 400V
J
J
=30V
= 2.5mA
=25°C
=25°C
= 23A
GS
GS
DS
=15V
=15V
= 0V
T
T
T
T
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
= 25°C
= 125°C
j
j
j
j
j
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
APT5010JLLU3
Min
Min
Min
3
4360
1300
Typ
894
543
509
843
593
Typ
Typ
160
130
700
60
96
24
49
11
15
25
1.6
1.9
1.4
44
23
85
30
70
3
4
8
±100
Max
Max
Max
100
500
100
250
500
1.8
5
Unit
Unit
Unit
mΩ
µA
nA
pF
nC
µA
µJ
µJ
ns
pF
nC
nC
V
ns
ns
V
A
A
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