APT77N60JC3 Microsemi Power Products Group, APT77N60JC3 Datasheet
APT77N60JC3
Manufacturer Part Number
APT77N60JC3
Description
MOSFET N-CH 600V 77A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT77N60JC3.pdf
(5 pages)
Specifications of APT77N60JC3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
77A
Vgs(th) (max) @ Id
3.9V @ 5.4mA
Gate Charge (qg) @ Vgs
640nC @ 10V
Input Capacitance (ciss) @ Vds
13600pF @ 25V
Power - Max
568W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT77N60JC3MI
APT77N60JC3MI
APT77N60JC3MI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT77N60JC3
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT77N60JC3
Quantity:
164
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
STATIC ELECTRICAL CHARACTERISTICS
• Ultra low R
• Ultra Low Gate Charge, Q
• Popular SOT-227 Package
MAXIMUM RATINGS
"COOLMOS
mark of Infineon Technologies AG"
C
Symbol
Symbol
T
Power Semiconductors
R
BV
V
V
V
J
I
V
dv
E
E
DS(on)
I
GS(th)
,T
O
I
DSS
GSS
P
I
GSM
T
DSS
DM
I
AR
D
GS
AR
AS
DSS
/
D
L
STG
dt
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
O
LMOS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
™
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
DS
(
ON
)
Super Junction MOSFET
1
g
DS
Microsemi Website - http://www.microsemi.com
C
= V
DS
= 25°C
C
7
7
• Low Miller Capacitance
• Avalanche Energy Rated
• N-Channel Enhancement Mode
= 25°C
4
GS
= 480V, I
GS
DS
DS
2
, I
= ±20V, V
GS
D
= V
= V
(V
= 5.4mA)
= 0V, I
GS
DSS
DSS
D
= 10V, I
= 77A, T
, V
, V
D
DS
GS
GS
= 500µA)
= 0V)
= 0V)
= 0V, T
D
J
= 60A)
= 125°C)
All Ratings: T
J
= 150°C)
600V 77A 0.035
APT77N60JC3
C
= 25°C unless otherwise specified.
MIN
600
2.1
APT77N60JC3
ISOTOP
-55 to 150
1800
.030
4.55
TYP
±20
±30
600
231
568
300
1.0
77
50
20
3
1
fi
0.035
±200
MAX
500
"UL Recongnized"
file # 145592
3.9
50
G
Ohms
Amps
Watts
Amps
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
V/ns
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S
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APT77N60JC3 Summary of contents
Page 1
... I = 5.4mA Microsemi Website - http://www.microsemi.com APT77N60JC3 600V 77A 0.035 Ω Ω Ω Ω Ω "UL Recongnized" file # 145592 ISOTOP fi 25°C unless otherwise specified. C APT77N60JC3 UNIT 600 Volts 77 Amps 231 ±20 Volts ±30 568 Watts 4.55 W/°C -55 to 150 °C ...
Page 2
... Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as P SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT77N60JC3 MIN TYP MAX 13600 4400 290 505 640 48 240 18 ...
Page 3
... I , DRAIN CURRENT (AMPERES) D FIGURE 5, R (ON) vs DRAIN CURRENT DS -50 - 100 125 150 T , JUNCTION TEMPERATURE (°C) J FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 125 150 T , CASE TEMPERATURE (°C) C FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT77N60JC3 4V 20 ...
Page 4
Graph removed V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 77A 120V 300V 480V 100 200 300 400 ...
Page 5
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT77N60JC3 Gate Voltage t t d(off) f 90% 0 10% Switching Energy Hex Nut M4 (4 places) 25.2 (0.992) 25 ...