APT6013JLL Microsemi Power Products Group, APT6013JLL Datasheet - Page 3

• Manufacturer Part Number: APT6013JLL
• Description: MOSFET N-CH 600V 39A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT6013JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 5630pF @ 25V
• Power - Max: 460W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Junction
temp. (°C)
160
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
40
35
30
25
20
10
15
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
(watts)
Power
V
FIGURE 4, TRANSFER CHARACTERISTICS
V DS > I D (ON) x R DS (ON)MAX.
GS
1
V
I
-25
250 µSEC. PULSE TEST
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
@ <0.5 % DUTY CYCLE
GS
T
= 19.5A
J
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
T J = +125°C
2
C
T J = +25°C
, CASE TEMPERATURE (°C)
0
3
25
75
RC MODEL
4
50
5
0.0260
0.0584
0.185
100
6
75
7
100 125 150
T J = -55°C
125
8
9
0.0012F
0.0354F
0.463F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
120
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
0
0
V
V GS =15 &10V
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
NORMALIZED TO
J
D
5
= 10V @ I
T
, JUNCTION TEMPERATURE (°C)
20
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
DS
D
25
25
40
(ON) vs DRAIN CURRENT
= 19.5A
15
50
50
6.5V
5.5V
5V
6V
7V
8V
60
75
75
V GS =20V
20
100 125 150
100 125 150
80
25
100
30