APT8024JLL Microsemi Power Products Group, APT8024JLL Datasheet
APT8024JLL
Manufacturer Part Number
APT8024JLL
Description
MOSFET N-CH 800V 29A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT8024JLL.pdf
(5 pages)
Specifications of APT8024JLL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4670pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT8024JLL
Manufacturer:
EXAR
Quantity:
101
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
STATIC ELECTRICAL CHARACTERISTICS
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
D
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
DS
, I
®
= ±30V, V
GS
D
by significantly lowering R
(V
= 640V, V
= 800V, V
R
= 2.5mA)
= 0V, I
GS
MOSFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 14.5A)
All Ratings: T
C
= 125°C)
DS(ON)
800V 29A 0.240
C
= 25°C unless otherwise specified.
MIN
800
3
APT8024JLL
-55 to 150
ISOTOP
2500
3.68
TYP
800
116
±30
±40
460
300
29
29
50
®
0.240
±100
MAX
100
500
5
"UL Recognized"
G
Ohms
Amps
Watts
Amps
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S
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APT8024JLL Summary of contents
Page 1
... ±30V 0V 2.5mA APT Website - http://www.advancedpower.com 800V 29A 0.240 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT8024JLL UNIT 800 Volts 29 Amps 116 ±30 Volts ±40 460 Watts 3.68 W/°C -55 to 150 300 Amps 29 50 2500 MIN TYP MAX ...
Page 2
... TYP MAX 29 116 1.3 850 22 10 MIN TYP MAX 0. +25° 5.95mH 25Ω, Peak ≤ ≤ 700A/µs ≤ 29A DSS Note Duty Factor Peak θ 1.0 APT8024JLL UNIT µ J UNIT Amps Volts ns µC V/ns UNIT °C/W = 29A ° ≤ 150 ...
Page 3
... V GS =10V V GS =20V DRAIN CURRENT (AMPERES) D FIGURE 5, R (ON) vs DRAIN CURRENT DS -50 - 100 125 150 T , JUNCTION TEMPERATURE (°C) J FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 125 150 T , CASE TEMPERATURE (°C) C FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT8024JLL ...
Page 4
OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 29A D ...
Page 5
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT8024JLL Gate Voltage t d(off) Drain Voltage 90 10% Drain Current 0 Switching Energy 11.8 (.463) 12.2 (.480) 8 ...