APT30M30JLL Microsemi Power Products Group, APT30M30JLL Datasheet - Page 3

• Manufacturer Part Number: APT30M30JLL
• Description: MOSFET N-CH 300V 88A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT30M30JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 7030pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Power
250
200
150
100
2.5
2.0
1.5
1.0
0.5
0.0
50
90
80
70
60
50
40
30
20
10
0
0
-50
25
0
V
FIGURE 4, TRANSFER CHARACTERISTICS
V DS > I D (ON) x R DS(ON) MAX.
GS
FIGURE 8, R
-25
250µSEC. PULSE TEST
, GATE-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
V
T
I
GS
D
J
T
, JUNCTION TEMPERATURE (°C)
T J = +125°C
50
= 44A
2
C
= 10V
, CASE TEMPERATURE (°C)
0
RC MODEL
T J = +25°C
DS(ON)
25
75
4
0.0528
0.0651
0.123
50
vs. TEMPERATURE
100
6
75
T J = -55°C
100 125 150
125
8
0.0203F
0.173F
0.490F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
250
200
150
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
0
-50
-50
0
0
V
DS
FIGURE 5, R
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
-25
T
GS
I
J
NORMALIZED TO
D
5
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
= 10V @ I
C
40
, CASE TEMPERATURE (°C)
0
0
10
60
DS(ON)
25
25
V GS =15 &10V
D
V GS =10V
= 44A
80 100 120 140 160 180
15
50
8V
vs DRAIN CURRENT
50
7.5V
V GS =20V
75
75
20
7V
100 125 150
100 125 150
6.5
25
6V
5.5V
APT30M30JLL
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