APT10035JLL Microsemi Power Products Group, APT10035JLL Datasheet - Page 4

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APT10035JLL

Manufacturer Part Number
APT10035JLL
Description
MOSFET N-CH 1000V 25A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT10035JLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
186nC @ 10V
Input Capacitance (ciss) @ Vds
5185pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT10035JLL
Manufacturer:
APT
Quantity:
25
Part Number:
APT10035JLL
Manufacturer:
APT
Quantity:
15 500
Typical Performance Curves
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
2500
2000
1500
1000
100
180
160
140
120
100
500
50
10
16
12
80
60
40
20
FIGURE 10, MAXIMUM SAFE OPERATING AREA
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
V
0
0
0
1
DS
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
V
R
T
L = 100µH
E
diode reverse recovery.
T C =+25°C
T J =+150°C
SINGLE PULSE
J
DD
G
DD
J
G
ON
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
= 125°C
= 125°C
D
= 5
OPERATION HERE
= 5
= 670V
= 670V
includes
= 28A
Q
10
10
50
g
, TOTAL GATE CHARGE (nC)
t
d(on)
10
E
100
V DS =500V
20
20
off
V DS =200V
I
I
D
D
(A)
(A)
150
30
30
100
t
d(off)
E
on
V DS =800V
200
40
40
1000
250
50
50
10mS
1mS
100µS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
1,000
5000
4000
3000
2000
1000
100
200
100
10
FIGURE 15, RISE AND FALL TIMES vs CURRENT
80
60
40
20
1
0
0
0.3
V
V
0
0
0
DS
SD
V
R
T
L = 100µH
J
DD
G
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 125°C
5
= 5
= 670V
0.5
R
T J =+150°C
10
10 15 20 25 30
10
G
, GATE RESISTANCE (Ohms)
0.7
20
20
I
D
0.9
(A)
T J =+25°C
30
30
V
I
T
L = 100µH
E
diode reverse recovery.
D
J
DD
ON
1.1
= 28A
= 125°C
t
f
= 670V
includes
35 40 45 50
t
E
r
off
40
40
1.3
E
C oss
on
C iss
C rss
APT10035JLL
1.5
50
50

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