APT50M60JVR Microsemi Power Products Group, APT50M60JVR Datasheet

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APT50M60JVR

Manufacturer Part Number
APT50M60JVR
Description
MOSFET N-CH 500V 63A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT50M60JVR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 31.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
63A
Vgs(th) (max) @ Id
4V @ 5mA
Gate Charge (qg) @ Vgs
560nC @ 10V
Input Capacitance (ciss) @ Vds
10600pF @ 25V
Power - Max
568W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50M60JVR
Manufacturer:
APT
Quantity:
25
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Popular SOT-227 Package
• Faster Switching
• Lower Leakage
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Symbol
Symbol
T
R
BV
V
V
V
J
I
V
E
E
DS(on)
I
GS(th)
,T
I
DSS
GSS
P
I
GSM
DSS
DM
T
AR
I
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
POWER MOS V
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
1
1
(Repetitive and Non-Repetitive)
DS
C
APT Website - http://www.advancedpower.com
= V
= 25°C
1
C
• Avalanche Energy Rated
= 25°C
4
GS
GS
2
DS
, I
DS
= ±30V, V
GS
D
(V
= 400V, V
®
= 500V, V
= 5mA)
= 0V, I
GS
= 10V, I
MOSFET
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 31.5A)
All Ratings: T
C
= 125°C)
500V 63A
C
®
= 25°C unless otherwise specified.
MIN
500
2
APT50M60JVR
-55 to 150
3200
4.55
TYP
±30
±40
500
252
568
300
63
63
50
ISOTOP
0.060
®
±100
MAX
250
25
4
0.060
G
"UL Recognized"
Ohms
Amps
Amps
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S

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APT50M60JVR Summary of contents

Page 1

... ±30V 0V 5mA APT Website - http://www.advancedpower.com 500V 63A 0.060 ® "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT50M60JVR UNIT 500 Volts 63 Amps 252 ±30 Volts ±40 568 Watts 4.55 W/°C -55 to 150 300 Amps 3200 MIN TYP MAX ...

Page 2

... Starting T = +25° 1.61mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT50M60JVR MIN TYP MAX 10600 1800 795 560 70 285 1235 = 15V ...

Page 3

RC MODEL Junction temp. (°C) 0.0516 Power 0.149 (watts) 0.0198 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 V DS > (ON (ON)MAX. 250µSEC. PULSE TEST 120 @ <0.5 % DUTY CYCLE 100 ...

Page 4

... FIGURE 15, RISE AND FALL TIMES vs CURRENT 25,000 V = 333V 63A 125°C 20,000 100µH E includes ON diode reverse recovery. 15,000 10,000 5,000 0 130 FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT50M60JVR C iss C oss C rss =+150° =+25°C 0.7 0.9 1.1 1.3 1 110 130 I ( off ...

Page 5

... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT50M60JVR Gate Voltage t d(off) Drain Voltage 90 10% 0 Drain Current Switching Energy 11.8 (.463) 12.2 (.480) 8 ...

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