APT50M60JVR

Manufacturer Part NumberAPT50M60JVR
DescriptionMOSFET N-CH 500V 63A SOT-227
ManufacturerMicrosemi Power Products Group
SeriesPOWER MOS V®
APT50M60JVR datasheets

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Specifications of APT50M60JVR

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs60 mOhm @ 31.5A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C63AVgs(th) (max) @ Id4V @ 5mA
Gate Charge (qg) @ Vgs560nC @ 10VInput Capacitance (ciss) @ Vds10600pF @ 25V
Power - Max568WMounting TypeChassis Mount
Package / CaseSOT-227, miniBLOCLead Free Status / RoHS StatusLead free / RoHS Compliant
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POWER MOS V
Power MOS V
is a new generation of high voltage N-Channel enhancement
®
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Popular SOT-227 Package
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
Symbol
Parameter
V
Drain-Source Voltage
DSS
I
Continuous Drain Current @ T
D
1
I
Pulsed Drain Current
DM
V
Gate-Source Voltage Continuous
GS
V
Gate-Source Voltage Transient
GSM
Total Power Dissipation @ T
P
D
Linear Derating Factor
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Lead Temperature: 0.063" from Case for 10 Sec.
L
I
1
Avalanche Current
(Repetitive and Non-Repetitive)
AR
E
Repetitive Avalanche Energy
AR
E
Single Pulse Avalanche Energy
AS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
BV
Drain-Source Breakdown Voltage (V
DSS
R
Drain-Source On-State Resistance
DS(on)
Zero Gate Voltage Drain Current (V
I
DSS
Zero Gate Voltage Drain Current (V
I
Gate-Source Leakage Current (V
GSS
Gate Threshold Voltage (V
V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
®
MOSFET
• Avalanche Energy Rated
All Ratings: T
= 25°C
C
= 25°C
C
1
4
= 0V, I
= 250µA)
GS
D
2
(V
= 10V, I
= 31.5A)
GS
D
= 500V, V
= 0V)
DS
GS
= 400V, V
= 0V, T
= 125°C)
DS
GS
C
= ±30V, V
= 0V)
GS
DS
= V
, I
= 5mA)
DS
GS
D
APT Website - http://www.advancedpower.com
500V 63A
0.060
®
"UL Recognized"
ISOTOP
®
G
= 25°C unless otherwise specified.
C
APT50M60JVR
UNIT
500
Volts
63
Amps
252
±30
Volts
±40
568
Watts
4.55
W/°C
-55 to 150
300
Amps
63
50
mJ
3200
MIN
TYP
MAX
UNIT
500
Volts
0.060
Ohms
25
µA
250
nA
±100
Volts
2
4
Ω Ω Ω Ω Ω
D
S
°C

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APT50M60JVR Summary of contents

  • Page 1

    ... ±30V 0V 5mA APT Website - http://www.advancedpower.com 500V 63A 0.060 ® "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT50M60JVR UNIT 500 Volts 63 Amps 252 ±30 Volts ±40 568 Watts 4.55 W/°C -55 to 150 300 Amps 3200 MIN TYP MAX ...

  • Page 2

    ... Starting T = +25° 1.61mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT50M60JVR MIN TYP MAX 10600 1800 795 560 70 285 1235 = 15V ...

  • Page 3

    RC MODEL Junction temp. (°C) 0.0516 Power 0.149 (watts) 0.0198 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 V DS > (ON (ON)MAX. 250µSEC. PULSE TEST 120 @ <0.5 % DUTY CYCLE 100 ...

  • Page 4

    ... FIGURE 15, RISE AND FALL TIMES vs CURRENT 25,000 V = 333V 63A 125°C 20,000 100µH E includes ON diode reverse recovery. 15,000 10,000 5,000 0 130 FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT50M60JVR C iss C oss C rss =+150° =+25°C 0.7 0.9 1.1 1.3 1 110 130 I ( off ...

  • Page 5

    ... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT50M60JVR Gate Voltage t d(off) Drain Voltage 90 10% 0 Drain Current Switching Energy 11.8 (.463) 12.2 (.480) 8 ...

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