APTC80A15T1G Microsemi Power Products Group, APTC80A15T1G Datasheet
APTC80A15T1G
Specifications of APTC80A15T1G
Related parts for APTC80A15T1G
APTC80A15T1G Summary of contents
Page 1
... PCB mounting • Low profile • RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTC80A15T1G = 150mΩ max @ Tj = 25°C Ultra low R DSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Symmetrical design Max ratings Unit 800 ...
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... GS Bus I = 28A 2.5Ω Test Conditions 28A 28A 400V R di /dt = 200A/µs S ≤ V ≤ 150° DSS j www.microsemi.com APTC80A15T1G Min Typ Max T = 25° 125°C 375 j 150 2.1 3 3.9 ±150 Min Typ Max 4507 2092 108 180 486 ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTC80A15T1G Min Typ Max Unit 0.45 °C/W 2500 V -40 150 °C -40 125 -40 100 M4 2.5 4.7 N Min Typ Max Unit 50 kΩ ...
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... I , Drain Current (A) D Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 6.5V 6V 5. =10V GS V =20V www.microsemi.com APTC80A15T1G 0.1 1 Transfert Characteristics 100 V > I (on)xRDS(on)MAX DS D 250µs pulse test @ < 0.5 duty cycle =125° =25° =125° Gate to Source Voltage (V) ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 1000 100 Drain to Source Voltage (V) DS APTC80A15T1G ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 125 150 Maximum Safe Operating Area 1000 100 limited by R DSon 10 Single pulse 1 T =150°C ...
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... U.S and Foreign patents pending. All Rights Reserved. t d(off) t d(on off =533V DS D=50% ZVS R =2.5Ω =125° =75°C C www.microsemi.com APTC80A15T1G Rise and Fall times vs Current =533V DS R =2.5Ω =125° L=100µ Drain Current (A) D Switching Energy vs Gate Resistance ...