APTC80H29T1G Microsemi Power Products Group, APTC80H29T1G Datasheet
APTC80H29T1G
Specifications of APTC80H29T1G
Related parts for APTC80H29T1G
APTC80H29T1G Summary of contents
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... RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTC80H29T1G = 290mΩ max @ Tj = 25°C Ultra low R DSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Symmetrical design Max ratings Unit 800 V 15 ...
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... V = 533V GS Bus I = 15A 5Ω Test Conditions 15A 15A 400V R di /dt = 100A/µs S ≤ V ≤ 150° DSS j www.microsemi.com APTC80H29T1G Min Typ Max T = 25° 125°C 250 j 290 2.1 3 3.9 ±100 Min Typ Max 2254 1046 243 139 425 ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTC80H29T1G Min Typ Max Unit 0.80 °C/W 2500 V -40 150 °C -40 125 -40 100 M4 2.5 4.7 N Min Typ Max Unit 50 kΩ ...
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... I , Drain Current (A) D Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 6.5V 6V 5. =10V GS V =20V www.microsemi.com APTC80H29T1G 0.1 1 Transfert Characteristics 50 V > I (on)xRDS(on)MAX DS D 250µs pulse test @ < 0.5 duty cycle =125° =25° =125° Gate to Source Voltage (V) ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 10000 1000 100 Drain to Source Voltage (V) DS APTC80H29T1G ON resistance vs Temperature 3 7.5A 2.5 D 2.0 1.5 1.0 0.5 0.0 25 150 T Maximum Safe Operating Area 100 limited by R DSon 10 1 Single pulse T =150° ...
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... U.S and Foreign patents pending. All Rights Reserved. td(off) td(on off =533V DS ZVS D=50% R =5Ω =125° =75° www.microsemi.com APTC80H29T1G Rise and Fall times vs Current =533V DS R =5Ω =125° L=100µ Drain Current (A) D Switching Energy vs Gate Resistance 1250 ...