APTC80H29T3G Microsemi Power Products Group, APTC80H29T3G Datasheet - Page 4

• Manufacturer Part Number: APTC80H29T3G
• Description: MOSFET PWR MOD FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTC80H29T3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 2254pF @ 25V
• Power - Max: 156W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical performance Curve
1.4
1.3
1.2
1.1
0.9
0.8
40
35
30
25
20
15
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
5
0
1
0
0
0
Low Voltage Output Characteristics
Normalized to
V
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
GS
V
V
0.9
0.3
0.05
0.7
0.5
=10V @ 7.5A
0.1
GS
DS
5
=15&10V
5
, Drain to Source Voltage (V)
R
DS(on)
I
D
, Drain Current (A)
10
vs Drain Current
0.0001
10
15
15
20
V
GS
=10V
V
GS
20
=20V
0.001
25
rectangular Pulse Duration (Seconds)
6.5V
4.5V
5.5V
4V
5V
6V
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25
30
Single Pulse
0.01
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
DS
APTC80H29T3G
0.1
V
1
> I
GS
T
Transfert Characteristics
50
D
, Gate to Source Voltage (V)
C
(on)xRDS(on)MAX
T
, Case Temperature (°C)
2
J
=125°C
3
T
75
J
=25°C
4
T
1
J
100
=-55°C
5
6
T
125
T
J
=-55°C
J
=125°C
7
10
150
8
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