APTC60DAM35T1G Microsemi Power Products Group, APTC60DAM35T1G Datasheet
APTC60DAM35T1G
Specifications of APTC60DAM35T1G
Related parts for APTC60DAM35T1G
APTC60DAM35T1G Summary of contents
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... I Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC60DAM35T1G V DSS R DSon I = 72A @ Tc = 25° Application • AC and DC motor control • ...
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... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC60DAM35T1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V j GS ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTC60DAM35T1G Min Typ Max Transistor 0.3 Diode 0.85 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... V , Drain to Source Voltage ( (on) vs Drain Current DS 1.1 Normalized to V =10V @ 36A GS 1.05 1 0.95 0 Drain Current (A) D APTC60DAM35T1G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 280 240 6.5V 200 6V 160 5.5V 120 =10V GS V =20V GS 80 100 120 www ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 1000 100 Drain to Source Voltage (V) DS APTC60DAM35T1G 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 125 150 1000 limited by R 100 10 1 125 150 1 V Gate Charge vs Gate to Source Voltage 14 I ...
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... U.S and Foreign patents pending. All Rights Reserved. td(off) td(on 100 120 E off 100 120 ZVS www.microsemi.com APTC60DAM35T1G Rise and Fall times vs Current 120 V =400V DS 100 R =2.5Ω =125° L=100µ ...