APT32F120J Microsemi Power Products Group, APT32F120J Datasheet
APT32F120J
Manufacturer Part Number
APT32F120J
Description
MOSFET N-CH 1200V 32A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 8™r
Datasheet
1.APT32F120J.pdf
(4 pages)
Specifications of APT32F120J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
560nC @ 10V
Input Capacitance (ciss) @ Vds
18200pF @ 25V
Power - Max
960W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT32F120J
Manufacturer:
INFINEON
Quantity:
5 000
Part Number:
APT32F120J
Quantity:
125
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Symbol
V
T
Torque
Power MOS 8
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
FEATURES
J
Isolation
R
R
V
E
I
,T
W
I
• Fast switching with low EMI
• Low t rr for high reliability
• Ultra low C rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
P
DM
I
AR
θ CS
θ JC
GS
D
AS
D
STG
T
Parameter
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
Package Weight
Terminals and Mounting Screws.
™
is a high speed, high voltage N-channel switch-mode power MOSFET.
rss
/C
iss
(50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
N-Channel FREDFET
result in excellent niose immunity and low switching loss. The
1
C
C
C
= 25°C
Microsemi Website - http://www.microsemi.com
2
= 25°C
= 100°C
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
rr
, soft
1200V, 32A, 0.35Ω Max, t rr ≤430ns
2500
Min
-55
Single die FREDFET
ISOTOP
Ratings
APT32F120J
Typ
0.11
1.03
29.2
2700
APT32F120J
±30
195
32
20
25
®
Max
0.13
960
150
1.1
10
"UL Recognized"
file # E145592
G
°C/W
in·lbf
Unit
Unit
N·m
mJ
°C
W
oz
A
V
A
V
g
D
S
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APT32F120J Summary of contents
Page 1
... Single and two switch forward • Flyback = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT32F120J 1200V, 32A, 0.35Ω Max ≤430ns , soft rr "UL Recognized" file # E145592 ISOTOP ® APT32F120J Single die FREDFET G Ratings 32 20 195 ±30 2700 25 Min Typ Max 960 0.13 0.11 -55 150 2500 1 ...
Page 2
Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefficient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefficient GS(th Zero Gate Voltage Drain Current DSS ...
Page 3
V = 10V -55° 25° 125°C J NORMALIZED 10V @ 25A & 4.5V V > MAX. ...
Page 4
I DM 13µs 100µs 1ms R ds(on) 10ms 100ms = T 125° line = T 75°C C Dissipated Power (Watts 0.9 0.7 0.5 0.3 0.1 0. 4.0 (.157) (2 places) ® ISOTOP is a ...