APTC60DAM24T1G Microsemi Power Products Group, APTC60DAM24T1G Datasheet
APTC60DAM24T1G
Specifications of APTC60DAM24T1G
Related parts for APTC60DAM24T1G
APTC60DAM24T1G Summary of contents
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... I Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC60DAM24T1G V DSS R DSon I = 95A @ Tc = 25° Application • AC and DC motor control • ...
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... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC60DAM24T1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V GS DS ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTC60DAM24T1G Min Typ Max Transistor 0.27 Diode 0.55 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... Drain to Source Voltage ( (on) vs Drain Current DS 1.3 Normalized to 1.25 V =10V @ 95A GS 1.2 1.15 1.1 1.05 1 0.95 0 120 160 200 240 280 I , Drain Current (A) D APTC60DAM24T1G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 280 240 6.5V 6V 200 160 5.5V 120 =10V GS V ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 1000000 100000 Coss 10000 1000 100 Drain to Source Voltage (V) DS APTC60DAM24T1G 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 125 150 1000 limited by R 100 10 1 125 150 1 V Gate Charge vs Gate to Source Voltage ...
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... U.S and Foreign patents pending. All Rights Reserved. td(off) td(on off V =400V DS D=50% ZVS R =2.5Ω =125° =75° www.microsemi.com APTC60DAM24T1G Rise and Fall times vs Current 70 V =400V =2.5Ω =125° L=100µ 100 120 140 160 I ...