APTC60HM70T3G Microsemi Power Products Group, APTC60HM70T3G Datasheet - Page 4

• Manufacturer Part Number: APTC60HM70T3G
• Description: MOSFET PWR MOD FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTC60HM70T3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 39A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 3.9V @ 2.7mA
• Gate Charge (qg) @ Vgs: 259nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 250W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.05
0.95
0.6
0.5
0.4
0.3
0.2
0.1
200
160
120
0.00001
1.1
0.9
80
40
0
0
1
0
0
Low Voltage Output Characteristics
Normalized to
V
0.05
0.5
0.1
0.7
0.3
0.9
V
GS
V
DS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=10V @ 19.5A
10
GS
, Drain to Source Voltage (V)
R
5
=15&10V
DS
I
(on) vs Drain Current
D
, Drain Current (A)
20
0.0001
10
30
15
V
40
GS
=10V
V
GS
0.001
20
=20V
6.5V
50
6V
4.5V
5.5V
4V
rectangular Pulse Duration (Seconds)
5V
60
25
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Single Pulse
0.01
140
120
100
80
60
40
20
40
35
30
25
20
15
10
0
5
0
DC Drain Current vs Case Temperature
25
APTC60HM70T3G
0
V
250µs pulse test @ < 0.5 duty cycle
0.1
DS
V
GS
> I
T
Transfert Characteristics
1
C
, Gate to Source Voltage (V)
D
50
, Case Temperature (°C)
(on)xR
2
T
T
J
J
=25°C
=125°C
DS
75
(on)MAX
3
1
4
100
5
T
J
125
=-55°C
6
10
150
7
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