APT10021JLL Microsemi Power Products Group, APT10021JLL Datasheet
APT10021JLL
Manufacturer Part Number
APT10021JLL
Description
MOSFET N-CH 1000V 37A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT10021JLL.pdf
(5 pages)
Specifications of APT10021JLL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 18.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
37A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
395nC @ 10V
Input Capacitance (ciss) @ Vds
9750pF @ 25V
Power - Max
694W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT10021JLL
Manufacturer:
APT
Quantity:
15 500
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
V
BV
V
V
J
I
V
I
E
E
DS(on)
GS(th)
,T
I
GSS
P
I
DSS
GSM
DM
T
DSS
AR
I
GS
AR
D
AS
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
APT Website - http://www.advancedpower.com
= V
= 25°C
C
1
= 25°C
4
GS
GS
2
DS
DS
, I
®
= ±30V, V
GS
D
by significantly lowering R
= 1000V, V
= 800V, V
(V
R
= 5mA)
= 0V, I
GS
MOSFET
= 10V, 18.5A)
DS
D
= 250µA)
GS
= 0V)
GS
= 0V, T
= 0V)
All Ratings: T
C
= 125°C)
DS(ON)
1000V 37A 0.210
C
= 25°C unless otherwise specified.
1000
MIN
3
APT10021JLL
-55 to 150
ISOTOP
1000
3600
5.56
TYP
±30
±40
148
694
300
37
37
50
®
0.210
±100
MAX
100
500
5
"UL Recognized"
G
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S
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APT10021JLL Summary of contents
Page 1
... ±30V 0V 5mA APT Website - http://www.advancedpower.com 1000V 37A 0.210 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT10021JLL UNIT 1000 Volts 37 Amps 148 ±30 Volts ±40 694 Watts 5.56 W/°C -55 to 150 300 Amps 37 50 3600 MIN TYP MAX ...
Page 2
... Starting T = +25° 5.26mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT10021JLL MIN TYP MAX 9750 1615 335 395 47 260 1560 = 15V ...
Page 3
RC MODEL Junction temp. ( ”C) 0.0244 Power 0.133 (Watts) 0.0218 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 V DS > (ON DS(ON) MAX. 160 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE ...
Page 4
OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 37A D ...
Page 5
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT10021JLL 90% Gate Voltage t d(off) Drain Voltage 90 10% 0 Drain Current Switching Energy 11.8 (.463) 12.2 (.480) 8 ...