APTC60AM24T1G Microsemi Power Products Group, APTC60AM24T1G Datasheet

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APTC60AM24T1G

Manufacturer Part Number
APTC60AM24T1G
Description
MOSFET PWR MOD PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTC60AM24T1G

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 47.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
95A
Vgs(th) (max) @ Id
3.9V @ 5mA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
14400pF @ 25V
Power - Max
462W
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
V
E
I
E
Super Junction MOSFET
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
10
APT0502 on www.microsemi.com
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
7
8
9
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Power Module
Phase leg
Q2
Q1
5
1
2
6
3
4
Parameter
11
12
NTC
www.microsemi.com
Application
Features
Benefits
V
R
I
D
DSS
DSon
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
= 95A @ Tc = 25°C
-
-
-
-
-
-
APTC60AM24T1G
T
T
T
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
= 600V
c
c
c
= 24mΩ max @ Tj = 25°C
= 25°C
= 80°C
= 25°C
DSon
Max ratings
1900
600
260
±20
462
95
70
24
15
3
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTC60AM24T1G Summary of contents

Page 1

... Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Parameter www.microsemi.com APTC60AM24T1G = 600V = 24mΩ max @ Tj = 25°C Ultra low R DSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged ...

Page 2

... Bus I = 95A ; R = 2.5Ω Test Conditions 95A 95A 350V R di /dt = 200A/µs S ≤ V ≤ 150° DSS j www.microsemi.com APTC60AM24T1G Min Typ Max T = 25°C 350 125°C 600 j 24 2.1 3 3.9 200 Min Typ Max 14.4 17 300 68 102 21 30 100 45 ...

Page 3

... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTC60AM24T1G Min Typ Max 0.27 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N.m g Unit kΩ ...

Page 4

... D Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 280 240 6.5V 6V 200 160 5.5V 120 =10V GS V =20V GS www.microsemi.com APTC60AM24T1G 0.1 1 Transfert Characteristics V > I (on)xR (on)MAX 250µs pulse test @ < 0.5 duty cycle T =125° =25° Gate to Source Voltage (V) GS ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 1000000 100000 Coss 10000 1000 100 Drain to Source Voltage (V) DS APTC60AM24T1G 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 125 150 1000 limited by R 100 10 1 125 150 1 V Gate Charge vs Gate to Source Voltage ...

Page 6

... U.S and Foreign patents pending. All Rights Reserved. td(off) td(on off V =400V DS D=50% ZVS R =2.5Ω =125° =75° www.microsemi.com APTC60AM24T1G Rise and Fall times vs Current 70 V =400V =2.5Ω =125° L=100µ 100 120 140 160 I ...

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