APTM100SKM90G Microsemi Power Products Group, APTM100SKM90G Datasheet

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APTM100SKM90G

Manufacturer Part Number
APTM100SKM90G
Description
MOSFET N-CH 1000V 78A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100SKM90G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
105 mOhm @ 39A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
78A
Vgs(th) (max) @ Id
5V @ 10mA
Gate Charge (qg) @ Vgs
744nC @ 10V
Input Capacitance (ciss) @ Vds
20700pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
G1
S1
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
VBUS
S1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Buck chopper
0/VBUS
Q1
Parameter
CR2
0/VBUS
VBUS
OUT
OUT
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 78A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 1000V
= 90mΩ typ @ Tj = 25°C
APTM100SKM90G
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
Max ratings
DSon
1000
1250
3000
312
±30
105
78
59
25
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM100SKM90G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100SKM90G V = 1000V DSS R = 90mΩ typ @ Tj = 25°C DSon I = 78A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100SKM90G = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125°C GS ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100SKM90G Min Transistor Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

Page 4

... DS(on) 1.4 Normalized to V =10V @ 39A 1.3 GS 1.2 V =10V GS 1 0.9 0 120 160 I , Drain Current (A) D APTM100SKM90G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 320 V 7V 280 250µs pulse test @ < 0.5 duty cycle 240 6.5V 200 160 6V 120 80 5. ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100SKM90G ON resistance vs Temperature 2.5 V =10V GS I =39A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100SKM90G 80 V ...

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