GP1S53VJ000F Sharp Microelectronics, GP1S53VJ000F Datasheet - Page 4

• Manufacturer Part Number: GP1S53VJ000F
• Description: SENSOR OPTO SLOT 5MM TRANS THRU
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S53VJ000F

• Sensing Distance: 0.197" (5mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 3µs, 4µs
• Mounting Type: Through Hole
• Package / Case: 4-SIP
• Operating Temperature: -25°C ~ 85°C
• No. Of Channels: 1
• Input Current: 20mA
• Output Voltage: 35V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Collector Emitter Voltage V(br)ceo: 35V
• Continuous Collector Current Ic Max: 5mA
• External Depth: 5.2mm
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Slot Width: 5 mm
• Aperture Width: 0.5 mm
• Output Device: Phototransistor
• Power Dissipation: 75 mW
• Maximum Fall Time: 20000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 15000 ns
• Minimum Operating Temperature: - 25 C
• Optocoupler Output Type: Phototransistor
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 425-1972; 425-1972-5; 425-1972-5

■ Absolute Maximum Ratings
∗
∗
∗
■ Electro-optical Characteristics
1 Refer to Fig. 1, 2, 3
2 Pulse width ≤ 100 μ s, Duty ratio = 0.01
3 For 5s or less
Output
Output Collector dark current
∗ 3
Transfer
teristics
charac-
Input
Input
Operating temperature
Storage temperature
Soldering temperature
∗ 1
∗ 1, 2
∗ 1
Forward voltage
Peak forward voltage
Reverse current
Collector current
Collector-emitter saturation voltage
Response time
Forward current
Peak forward current
Collector power dissipation
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Parameter
Parameter
Rise time
Fall time
Symbol
V
V
T
T
T
I
V
P
I
I
FM
P
CEO
ECO
opr
stg
sol
F
C
C
R
Symbol
V
V
I
CE(sat)
V
CEO
I
I
t
t
FM
R
C
r
f
− 40 to + 100
F
− 25 to + 85
Rating
260
50
75
35
20
75
1
6
6
V
CE
(T
4
I
= 2V, I
F
a
V
= 25˚C)
= 40mA, I
Unit
mW
mW
mA
mA
˚C
˚C
˚C
CE
V
V
V
A
= 5V, I
Condition
I
V
I
C
FM
F
V
= 2mA, R
= 20mA
CE
R
= 0.5A
= 20V
= 3V
F
C
= 20mA
= 0.2mA
L
= 100 Ω
MIN.
0.5
−
−
−
−
−
−
TYP.
1.25
−
−
−
3
1
3
4
Sheet No.: D2-A02601EN
GP1S53VJ000F
MAX.
100
1.4
0.4
10
15
15
20
4
(T
a
= 25˚C)
Unit
mA
μ A
nA
μ s
V
V
V