GP1S53VJ000F Sharp Microelectronics, GP1S53VJ000F Datasheet - Page 8

• Manufacturer Part Number: GP1S53VJ000F
• Description: SENSOR OPTO SLOT 5MM TRANS THRU
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S53VJ000F

• Sensing Distance: 0.197" (5mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 3µs, 4µs
• Mounting Type: Through Hole
• Package / Case: 4-SIP
• Operating Temperature: -25°C ~ 85°C
• No. Of Channels: 1
• Input Current: 20mA
• Output Voltage: 35V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Collector Emitter Voltage V(br)ceo: 35V
• Continuous Collector Current Ic Max: 5mA
• External Depth: 5.2mm
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Slot Width: 5 mm
• Aperture Width: 0.5 mm
• Output Device: Phototransistor
• Power Dissipation: 75 mW
• Maximum Fall Time: 20000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 15000 ns
• Minimum Operating Temperature: - 25 C
• Optocoupler Output Type: Phototransistor
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 425-1972; 425-1972-5; 425-1972-5

■ Design Considerations
● Design guide
● Degradation
● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransistor
1) Prevention of detection error
2) Position of opaque board
This product is not designed against irradiation and incorporates non-coherent IRED.
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
This product is assembled using the below parts.
Infrared emitting diode
Black NORYL resin
Category
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
(non-coherent)
Category
Case
Silicon (Si)
Material
Solder dip. (Sn−3Ag−0.5Cu)
Gallium arsenide (GaAs)
Lead frame plating
Maximum Sensitivity
Material
wavelength (nm)
800
4mm or more
8
Maximum light emitting
wavelength (nm)
wavelength (nm)
400 to 1 200
950
Sensitivity
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D2-A02601EN
GP1S53VJ000F
0.3
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