OPB817Z TT Electronics/Optek Technology, OPB817Z Datasheet

OPB817Z

Manufacturer Part Number

OPB817Z

Description

SENS OPTO SLOT 5.08MM TRANS C-MT

Manufacturer

TT Electronics/Optek Technology

Type

Unamplifiedr

Datasheet

1.OPB817Z.pdf (2 pages)

Specifications of OPB817Z

Sensing Distance

0.200" (5.08mm)

Sensing Method

Transmissive

Output Configuration

Phototransistor

Current - Dc Forward (if)

50mA

Current - Collector (ic) (max)

30mA

Voltage - Collector Emitter Breakdown (max)

30V

Mounting Type

Chassis Mount

Package / Case

Module, Pre-Wired

Operating Temperature

-40°C ~ 80°C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Response Time

Other names

365-1260

Current page: 1 of 2
Download datasheet (80Kb)

Prod uct Bul le tin OPB817

February 2001

Slotted Op ti cal Switch

Type OPB817

Fea tures

De scrip tion

The OPB817 consists of an infrared

emitting diode and an NPN silicon

phototransistor mounted in an opaque

housing with clear windows for dust

protection. The extended deep slot

allows for a longer reach of the optical

center line from the mounting plane, .90”

(22.86 mm).

Internal apertures are .010” x 0.06” for

the phototransistor “ S side” and .050” x

.06” for the LED “ E side” .

Custom electrical, wire or cabling is

available. Contact your local

representative or Optek for more

information.

Visit our website at www.optekinc.com

or email us at sensors@optekinc.com

Op tek Tech nol ogy, Inc.

.20” (5.08 mm) wide gap

24” minimum, 26 AWG wire leads

Dust protection

.86” (21.8 mm) deep slot

1215 W. Crosby Road

Ab so lute Maxi mum Rat ings (T

Stor age and Op er ating Tem per a ture Range . . . . . . . . . . . . . . . . . . . . -40 C to +80 C

Input Di ode

For ward DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Peak For ward Cur rent (1 s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A

Re verse DC Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V

Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW

Out put Phototransistor

Col lec tor-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Emit ter-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V

Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA

Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW

NOTES:

(1) De rate lin early 1.67 mW/ C above 25 C.

(2) All pa ram e ters tested us ing pulse tech nique.

(3) Clear dust pro tection.

PRECAUTIONS: Ex po sure of the plas tic body to chlo ri nated hy dro car bons and ke tones such as

thread lock and in stant ad he sive prod ucts will de grade the plas tic body. Cleaning agents

meth a nol and isopropanol are rec om mended. Spray or wipe do not sub merge.

Car roll ton, Texas 75006

= 25

(972) 323- 2200

C un less oth er wise noted)

Fax (972) 323- 2396

(1)

Related parts for OPB817Z

OPB817Z Summary of contents

Page 1

Prod uct Bul le tin OPB817 February 2001 Slotted Op ti cal Switch Type OPB817 Fea tures .20” (5.08 mm) wide gap 24” minimum, 26 AWG wire leads Dust protection .86” (21.8 mm) deep slot De scrip tion The OPB817 ...

Page 2

Type OPB817 Elec tri cal Char ac ter is tics ( SYM BOL PA RAME TER In put Di ode V Forward Voltage F I Reverse Current R Phototransistor V Collector-Emitter Breakdown Voltage (BR)CEO V Emitter-Collector Breakdown ...

Related keywords

OPB817Z datasheet
OPB817Z data sheet
OPB817Z pdf datasheet
OPB817Z component
OPB817Z part
OPB817Z distributor
OPB817Z RoHS
OPB817Z datasheet download