IXTH16N50D2 IXYS, IXTH16N50D2 Datasheet - Page 3

• Manufacturer Part Number: IXTH16N50D2
• Description: MOSFET N-CH 500V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 240 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 199nC @ 5V
• Input Capacitance (ciss) @ Vds: 5250pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Vds, Max, (v): 500
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.24
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 5250
• Crss, Typ, (pf): 130
• Qg, Typ, (nc): 199
• Pd, (w): 695
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2010 IXYS CORPORATION, All Rights Reserved
32
28
24
20
16
12
16
14
12
10
16
14
12
10
8
4
0
8
6
4
2
0
8
6
4
2
0
0.0
0
0
0.5
Fig. 3. Output Characteristics @ T
1
Fig. 1. Output Characteristics @ T
10
Fig. 5. Drain Current @ T
1.0
2
20
V
1.5
DS
3
V
V
V
DS
GS
DS
- Volts
V
- 0.4V
- 0.8V
- 1.2V
- 1.6V
- 2.0V
- 2.4V
GS
- Volts
V
= 0V
- Volts
GS
= 5V
2V
1V
= 5.0V
2.0
4
1.0V
0.5V
30
0V
J
= 100ºC
2.5
5
J
J
- 2.0V
- 2.5V
= 125ºC
-1.5V
- 0.5V
-1.0V
= 25ºC
- 0V
- 2.0V
- 2.5V
- 3.0V
-0.5V
-1.0V
-1.5V
40
3.0
6
3.5
50
7
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
32
28
24
20
16
12
80
70
60
50
40
30
20
10
8
4
0
0
0
-5
0
Fig. 2. Extended Output Characteristics @ T
Fig. 6. Dynamic Resistance vs. Gate Voltage
5
T
J
10
= 100ºC
-4
Fig. 4. Drain Current @ T
10
T
20
-3
V
J
= 25ºC
DS
15
V
V
V
V
GS
GS
DS
GS
- Volts
- 0.4V
- 0.8V
- 1.2V
- 1.6V
- 2.0V
- 2.4V
= 5V
= 0V
- Volts
- Volts
3V
20
30
-2
IXTH16N50D2
IXTT16N50D2
J
= 25ºC
25
∆
V
2V
DS
1.5V
40
= 50V - 25V
-1
1V
0.5V
J
30
= 25ºC
0V
- 0.5V
-1V
- 2V
50
35
0