IXTH16N50D2 IXYS, IXTH16N50D2 Datasheet - Page 4

• Manufacturer Part Number: IXTH16N50D2
• Description: MOSFET N-CH 500V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 240 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 199nC @ 5V
• Input Capacitance (ciss) @ Vds: 5250pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Vds, Max, (v): 500
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.24
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 5250
• Crss, Typ, (pf): 130
• Qg, Typ, (nc): 199
• Pd, (w): 695
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
50
40
30
20
10
0
-3.5
-50
-50
V
Fig. 7. Normalized R
V
I
DS
D
GS
-3.0
= 8A
= 30V
-25
-25
= 0V
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
vs. Junction Temperature
Fig. 9. Input Admittance
-2.0
T
T
J
J
25
25
- Degrees Centigrade
- Degrees Centigrade
DS(on)
V
-1.5
GS
T
- Volts
50
50
J
vs. Junction Temperature
= 125ºC
-1.0
V
- 40ºC
25ºC
GS(off)
75
75
@ V
-0.5
DS
BV
= 25V
DSX
100
100
0.0
@ V
GS
125
125
= - 5V
0.5
150
1.0
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0.3
0
0
V
T
T
V
V
DS
J
J
GS
GS
= 125ºC
= 25ºC
Fig. 12. Forward Voltage Drop of Intrinsic Diode
= 30V
5
5
= -10V
= 0V
Fig. 8. R
5V
0.4
- - - -
10
10
Fig. 10. Transconductance
DS(on)
15
15
0.5
vs. Drain Current
Normalized to I
20
20
T
J
I
I
D
D
= 125ºC
V
T
SD
- Amperes
- Amperes
J
= - 40ºC, 25ºC, 125ºC
0.6
25
25
- Volts
30
30
IXTH16N50D2
IXTT16N50D2
D
0.7
= 8A Value
35
35
40
40
T
0.8
J
= 25ºC
45
45
0.9
50
50