IXTH16N50D2 IXYS, IXTH16N50D2 Datasheet - Page 5

• Manufacturer Part Number: IXTH16N50D2
• Description: MOSFET N-CH 500V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 240 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 199nC @ 5V
• Input Capacitance (ciss) @ Vds: 5250pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Vds, Max, (v): 500
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.24
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 5250
• Crss, Typ, (pf): 130
• Qg, Typ, (nc): 199
• Pd, (w): 695
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2010 IXYS CORPORATION, All Rights Reserved
100,000
10,000
1,000
100
0.1
10.000
10
100
1.000
0.300
0.100
0.010
0.001
1
10
10
0.00001
0
R
T
T
Single Pulse
DS(on)
J
C
f
= 150ºC
= 25ºC
= 1 MHz
Fig. 15. Forward-Bias Safe Operating Area
Limit
5
10
Fig. 13. Capacitance
0.0001
@ T
15
V
C
V
DS
DS
= 25ºC
100
- Volts
20
- Volts
25
Fig. 17. Maximum Transient Thermal Impedance
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
C oss
C rss
C iss
DC
25µs
100µs
1ms
10ms
100ms
35
1,000
Pulse Width - Seconds
40
hvjv
0.01
100
0.1
10
-1
-2
-3
-4
-5
1
5
4
3
2
1
0
10
0
T
T
Single Pulse
R
J
C
V
I
I
DS(on)
D
G
= 150ºC
DS
20
= 75ºC
= 8A
= 10mA
Fig. 16. Forward-Bias Safe Operating Area
= 250V
Limit
40
0.1
60
Fig. 14. Gate Charge
Q
@ T
80
G
- NanoCoulombs
V
C
DS
= 75ºC
100
100
- Volts
120
IXTH16N50D2
IXTT16N50D2
1
140
160
IXYS REF: T_16N50D2(8C)4-08-10
DC
25µs
100µs
1ms
10ms
100ms
180
1,000
200
10