BLF7G27L-100,118 NXP Semiconductors, BLF7G27L-100,118 Datasheet

TRANSISTOR PWR LDMOS SOT502

BLF7G27L-100,118

Manufacturer Part Number
BLF7G27L-100,118
Description
TRANSISTOR PWR LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G27L-100,118

Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
2.6GHz ~ 2.7GHz
Gain
17.5dB
Voltage - Rated
65V
Current - Test
900mA
Voltage - Test
28V
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
100 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
Mode of operation
IS-95
Single carrier W-CDMA 2500 to 2700 900
BLF7G27L-100;
BLF7G27LS-100
Power LDMOS transistor
Rev. 2 — 5 April 2011
Excellent ruggedness
High efficiency
Low R
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
th
Typical performance
providing excellent thermal stability
f
(MHz)
2500 to 2700 900
case
= 25
°
C in a common source class-AB production test circuit.
I
(mA) (V)
Dq
V
28
28
DS
20
25
P
(W)
L(AV)
G
(dB) (%)
18
17.5
p
Preliminary data sheet
η
28
30
D
ACPR
(dBc)
−45
-
[1]
885k
ACPR
(dBc)
-
−41
[2]
5M

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BLF7G27L-100,118 Summary of contents

Page 1

... BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 Single carrier W-CDMA 2500 to 2700 900 [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13) ...

Page 2

... stg Thermal characteristics Table 5. Symbol Parameter R th(j-c) BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads - earless flanged LDMOST ceramic package; 2 leads Limiting values ...

Page 3

... P L(AV η D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G27L-100 and BLF7G27LS-100 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 Characteristics C unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage ...

Page 4

... 900 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 1. Single carrier IS-95 power gain as a function of average output power; typical values BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 001aan538 η D (%) (3) (2) ( (W) L(AV) ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 2. All information provided in this document is subject to legal disclaimers. ...

Page 5

... 900 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 5. Single carrier IS-95 peak-to-average power ratio as a function of average output power; typical values BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 001aan540 −50 ACPR 1980k (dBc) −60 (1) (2) (3) −70 − (W) L(AV) ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 4 ...

Page 6

... 900 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 7. Pulsed CW power gain as a function of output power; typical values BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 001aan544 (1) (2) (3) 80 120 P (W) L Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 April 2011 ...

Page 7

... 900 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 9. Single carrier W-CDMA power gain as a function of average output power; typical values BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 001aan546 η D (%) (W) L(AV) ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 10. Single carrier W-CDMA drain efficiency as a All information provided in this document is subject to legal disclaimers. Rev. 2 — ...

Page 8

... 900 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of average output power; typical values BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 001aan548 −50 ACPR (dBc) −60 (1) (2) (3) −70 − (W) L(AV) ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 12 ...

Page 9

... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 15. Package outline SOT502A BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 10

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 16. Package outline SOT502B BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 11

... IS-95 ESD LDMOS LDMOST N-CDMA PAR RF VSWR 10. Revision history Table 9. Revision history Document ID BLF7G27L-100_7G27LS-100 v.2 20110405 Modifications: BLF7G27L-100_7G27LS-100 v.1 20100421 BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor ...

Page 12

... BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... For sales office addresses, please send an email to: BLF7G27L-100_7G27LS-100 Preliminary data sheet BLF7G27L-100; BLF7G27LS-100 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 5 April 2011 Document identifier: BLF7G27L-100_7G27LS-100 ...

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