BLF7G27L-75P,112 NXP Semiconductors, BLF7G27L-75P,112 Datasheet - Page 10

• Manufacturer Part Number: BLF7G27L-75P,112
• Description: TRANSISTOR PWR LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-75P,112

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 12W
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 18 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Document ID
BLF7G27L-75P_BLF7G27LS-75P v.2
Modifications:
BLF7G27L-75P_BLF7G27LS-75P v.1
Revision history
Table 8.
Acronym
CCDF
CW
DPCH
3GPP
IS-95
ESD
LDMOS
LDMOST
N-CDMA
PAR
RF
VSWR
W-CDMA
Abbreviations
Release date
20100714
20100329
All information provided in this document is subject to legal disclaimers.
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Description
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
3rd Generation Partnership Project
Interim Standard 95
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
The status of this document has been changed to “Preliminary data sheet”.
Table 1 on page
Table 4 on page
Table 5 on page
Table 6 on page
Table 7 on page
Section 7.1 on page
Added
Added
Added
BLF7G27L-75P; BLF7G27LS-75P
Rev. 2 — 14 July 2010
Section 7.2 on page
Section 7.3 on page
Section 7.4 on page
Data sheet status
Product data sheet
Objective data sheet
1: changed the value of ACPR
2: added the maximum value of I
3: changed several values.
3: changed several values.
3: changed several values.
3: changed the value of P
4.
4.
6.
Change notice
-
-
L
885k
.
Power LDMOS transistor
D
.
to 46 dBc.
Supersedes
BLF7G27L-75P_
BLF7G27LS-75P v.1
-
© NXP B.V. 2010. All rights reserved.
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