BPW76A Vishay, BPW76A Datasheet

Photodetector Transistors NPN Phototransistor 80V 250mW 850nm

BPW76A

Manufacturer Part Number
BPW76A
Description
Photodetector Transistors NPN Phototransistor 80V 250mW 850nm
Manufacturer
Vishay
Type
Chipr
Series
-r
Datasheets

Specifications of BPW76A

Maximum Power Dissipation
250 mW
Maximum Dark Current
100 nA
Maximum Operating Temperature
+ 125 C
Package / Case
TO-18
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
250mW
Viewing Angle
40°
No. Of Pins
3
Light Current
0.6mA
Dark Current
100nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
100nA
Wavelength
850nm
Power - Max
250mW
Mounting Type
Through Hole
Orientation
Top View
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
100nA
Power Dissipation
250mW
Peak Wavelength
850nm
Half-intensity Angle
80deg
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW76A
Manufacturer:
MICROCHIP
Quantity:
1 001
Part Number:
BPW76A
Manufacturer:
VISHAY
Quantity:
220
BPW76A, BPW76B
Vishay Semiconductors
DESCRIPTION
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
www.vishay.com
398
amb
PRODUCT SUMMARY
COMPONENT
BPW76A
BPW76B
ORDERING INFORMATION
ORDERING CODE
BPW76A
BPW76B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Thermal resistance junction/gase
= 25 °C, unless otherwise specified
Silicon NPN Phototransistor, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
94 8401
PACKAGING
Connected with Cu wire, 0.14 mm
0.4 to 0.8
I
ca
> 0.6
Bulk
Bulk
(mA)
t
p
TEST CONDITION
/T = 0.5, t
T
amb
t ≤ 5 s
≤ 25 °C
p
≤ 10 ms
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 40°
• Base terminal connected
• Hermetically sealed package
• Flat glass window
• Lead
APPLICATIONS
• Detector in electronic control and drive circuits
RoHS 2002/95/EC and WEEE 2002/96/EC
2
REMARKS
ϕ (deg)
(Pb)-free
± 40
± 40
SYMBOL
V
V
V
R
R
T
T
I
T
P
CBO
CEO
EBO
CM
I
T
amb
thJA
thJC
stg
C
sd
V
j
component
- 40 to + 125
- 40 to + 125
VALUE
100
250
125
260
400
150
80
70
50
5
PACKAGE FORM
in
Document Number: 81526
450 to 1080
450 to 1080
λ
TO-18
TO-18
0.1
accordance
Rev. 1.4, 08-Sep-08
(nm)
UNIT
K/W
K/W
mW
mA
mA
°C
°C
°C
°C
V
V
V
with

Related parts for BPW76A

BPW76A Summary of contents

Page 1

... BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and flat glass window sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT BPW76A BPW76B Note Test condition see table “ ...

Page 2

... 100 Ω mA TEST CONDITION PART SYMBOL , λ = 950 nm, BPW76A mW/ BPW76B CE 150 94 8344 Fig Relative Collector Current vs. Ambient Temperature BPW76A, BPW76B Vishay Semiconductors SYMBOL MIN. TYP. MAX (BR)CEO I 1 100 CEO C 6 CEO ϕ ± 40 λ 850 p 450 to λ 0.1 1080 V ...

Page 3

... BPW76A, BPW76B Vishay Semiconductors 10 1 0.1 V λ = 950 nm 0.01 0.001 0.01 0 Irradiance (mW/cm 94 8345 e Fig Collector Light Current vs. Irradiance 1 BPW76A mW/cm e λ = 950 nm 0.5 mW/cm 0.2 mW/cm 0.1 0.1 mW/cm 0.05 mW/cm 0.01 0 Collector Emitter Voltage (V) 94 8346 CE Fig Collector Light Current vs. Collector Emitter Voltage ...

Page 4

... PACKAGE DIMENSIONS in millimeters Ø 4.7 Chip position Lens Drawing-No.: 6.503-5004.01-4 Issue:1; 01.07.96 96 12175 Document Number: 81526 For technical questions, contact: detectortechsupport@vishay.com Rev. 1.4, 08-Sep-08 2.54 nom 0.05 - 0.1 + 0.02 0.45 - 0.05 BPW76A, BPW76B Vishay Semiconductors technical drawings according to DIN specifications www.vishay.com 401 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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