BPW76A Vishay, BPW76A Datasheet - Page 3

Photodetector Transistors NPN Phototransistor 80V 250mW 850nm

BPW76A

Manufacturer Part Number
BPW76A
Description
Photodetector Transistors NPN Phototransistor 80V 250mW 850nm
Manufacturer
Vishay
Type
Chipr
Series
-r
Datasheets

Specifications of BPW76A

Maximum Power Dissipation
250 mW
Maximum Dark Current
100 nA
Maximum Operating Temperature
+ 125 C
Package / Case
TO-18
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
250mW
Viewing Angle
40°
No. Of Pins
3
Light Current
0.6mA
Dark Current
100nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
100nA
Wavelength
850nm
Power - Max
250mW
Mounting Type
Through Hole
Orientation
Top View
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
100nA
Power Dissipation
250mW
Peak Wavelength
850nm
Half-intensity Angle
80deg
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW76A
Manufacturer:
MICROCHIP
Quantity:
1 001
Part Number:
BPW76A
Manufacturer:
VISHAY
Quantity:
220
BPW76A, BPW76B
Vishay Semiconductors
www.vishay.com
400
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
94 8247
94 8345
94 8346
Fig. 4 - Collector Light Current vs. Irradiance
0.001
0.01
0.01
0.1
0.1
20
16
12
10
1
1
8
4
0
0.01
0.1
0.1
λ = 950 nm
BPW76A
V
V
CE
CE
- Collector Ermitter Voltage (V)
E
- Collector Emitter Voltage (V)
e
- Irradiance (mW/cm
0.1
1
1
E
e
= 1 mW/cm
0.05 mW/cm
f = 1 MHz
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
For technical questions, contact: detectortechsupport@vishay.com
λ = 950 nm
V
10
10
CE
1
Silicon NPN Phototransistor, RoHS Compliant
= 5 V
2
2
)
2
2
2
2
100
100
10
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
94 8253
94 8347
94 8348
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
12
10
0
8
6
4
2
0
400
0
0.6
0.4
I
C
4
- Collector Current (mA)
600
λ - Wavelength (nm)
0.2
8
λ = 950 nm
R
0
V
L
800
CE
= 100 Ω
Document Number: 81526
= 5 V
0.2
12
10°
Rev. 1.4, 08-Sep-08
t
on
t
0.4
off
1000
20°
16
0.6
30°
40°
50°
60°
70°
80°

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