BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 6

• Manufacturer Part Number: BPX 43-3/4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-3/4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 300nA
• Wavelength: 880nm
• Viewing Angle: 30°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.22/0.24V
• Dark Current (max): 100nA
• Light Current: 6000/9500uA
• Rise Time: 12000/15000ns
• Fall Time: 12000/15000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3581

Collector-Base Capacitance
C
Directional Characteristics
S
2007-04-02
rel
CB
=
=
f
f
(ϕ)
(V
CB
),
f
= 1 MHz,
E
= 0
Emitter-Base Capacitance
C
EB
=
f
(
V
EB
),
f
= 1 MHz,
6
E
= 0
BPX 43