BPW 34 S-Z OSRAM Opto Semiconductors Inc, BPW 34 S-Z Datasheet

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... Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (R18R) BPW 34 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • DIL-Plastikbauform mit hoher Packungsdichte • ...

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... Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom Dark current Spektrale Fotoempfindlichkeit, Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield 2004-03-10 BPW 34, BPW 34 S, BPW 34 S (R18R) Symbol Symbol BPW 34 S BPW 34 S (R18R – 40 … + 100 op stg tot T ...

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... Forward voltage Kapazitä MHz, R Capacitance V Temperaturkoeffizient von Temperature coefficient Temperaturkoeffizient von SC I Temperature coefficient of SC Rauschäquivalente Strahlungsleistung Noise equivalent power 850 nm R Nachweisgrenze Detection limit 2004-03-10 BPW 34, BPW 34 S, BPW 34 S (R18R 2856 2856 K) (cont’d) Symbol Symbol 800 ...

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... S % rel 400 500 600 700 800 900 nm 1100 Dark Current OHF00080 4000 R pA 3000 2000 1000 Directional Characteristics rel 100 1.0 0.8 0.6 0.4 2004-03-10 BPW 34, BPW 34 S, BPW 34 S (R18R Photocurrent = ( ), Open-Circuit Voltage OHF01066 Capacitance MHz OHF00081 100 C pF ...

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... Maßzeichnung Package Outlines BPW 34 BPW 34 S Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2004-03-10 BPW 34, BPW 34 S, BPW 34 S (R18R) 5.4 (0.213) Cathode marking 4.9 (0.193) 4.0 (0.157) 4.5 (0.177) 3.7 (0.146) 4.3 (0.169) 0.6 (0.024) 0.6 (0.024) ...

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... Life support devices or systems are intended ( implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail reasonable to assume that the health of the user may be endangered. 2004-03-10 BPW 34, BPW 34 S, BPW 34 S (R18R) Chip position 1.1 (0.043) 0.9 (0.035) 6 ...