BPW 34 FASR-Z OSRAM Opto Semiconductors Inc, BPW 34 FASR-Z Datasheet - Page 3

• Manufacturer Part Number: BPW 34 FASR-Z
• Description: Photodiodes PHOTODIODE, SMT RG
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34 FASR-Z

• Photodiode Material: Silicon
• Peak Wavelength: 880 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 2 nA
• Maximum Rise Time: 0.02 us
• Maximum Fall Time: 0.02 us
• Package / Case: DIL
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.65A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 50uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2699

Kennwerte (
Characteristics (cont’d)
Bezeichnung
Parameter
Kurzschlussstrom,
Short-circuit current
Anstiegs- und Abfallzeit des Fotostroms
Rise and fall time of the photocurrent
R
Durchlassspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2007-03-30
L
R
= 50 Ω;
= 10 V
V
V
R
R
T
= 0 V,
= 5 V; λ = 850 nm;
A
= 25 °C, λ = 870 nm)
V
E
R
f
e
= 10 V,
I
= 1 MHz,
= 0.5 mW/cm
F
= 100 mA,
V
I
V
I
SC
SC
O
O
E
I
= 0
p
E
2
= 800 μA
= 0
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
Symbol
Symbol
I
t
V
C
TC
TC
NEP
D*
r
SC
3
,
F
0
t
V
I
f
Wert
Value
23
20
1.3
72
– 2.6
0.03
3.9 × 10
6.8 × 10
– 14
12
Einheit
Unit
μA
ns
V
pF
mV/K
%/K
----------- -
cm
------------------------- -
W
Hz
×
W
Hz