TCDT1122G Vishay, TCDT1122G Datasheet - Page 4

• Manufacturer Part Number: TCDT1122G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR > 63-125%
• Manufacturer: Vishay

Specifications of TCDT1122G

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 90 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TCDT1120/ TCDT1120G
Vishay Semiconductors
Coupler
Insulation Rated Parameters
Switching Characteristics
www.vishay.com
4
Rated impulse voltage
Safety temperature
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Insulation resistance
95 10934
Test condition
TCDT1120G
TCDT1123G
TCDT1124G
300
250
200
150
100
TCDT1120
TCDT1123
TCDT1124
Parameter
50
Symbol
0
0
Unit
Parameter
Parameter
25
I
si (mA)
P
50
Figure 1. Derating diagram
si (mW)
75 100 125 150 175 200
T
amb
Current
mA
10
10
10
10
I
( °C )
F
100 %, t
t
(see figure 2)
V
V
V
(construction test only)
Tr
IO
IO
IO
= 60 s, t
= 500 V
= 500 V, T
= 500 V, T
Delay
2.5
2.5
2.8
2.0
µs
t
test
D
Test condition
Test condition
test
= 1 s
amb
amb
= 10 s,
Rise time
≤ 100 °C
≤ 150 °C
3.0
3.0
4.2
4.0
µs
t
r
V
S
= 5 V, R
(see figure 3)
Storage
0.3
0.3
0.3
0.3
µs
t
S
L
Figure 2. Test pulse diagram for sample test according to DIN EN
Symbol
Symbol
= 100 Ω
V
V
13930
V
V
R
R
R
V
IOTM
T
IOTM
V
V
pd
pd
IOWM
IO
IO
IO
si
IOTM
IORM
V
Fall time
Pd
0
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
3.7
3.7
4.7
4.7
µs
t
f
t
1
10
10
Min
Min
10
1.6
1.3
6
12
11
9
Turn-on
time
t
t
t
5.5
5.5
7.0
6.0
t
1
3
stres
µs
t
on
test
, t
, t
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
Typ.
Typ.
Turn-off
time
4.0
4.0
5.0
5.0
t
µs
off
Document Number 83532
Max
Max
t
150
2
Turn-on
V
6
t
16.5
16.5
21.5
20.0
3
time
S
Rev. 1.6, 26-Oct-04
t
t
µs
t
stres
on
(see figure 4)
test
= 5 V, R
t
t
4
L
Turn-off
= 1 kΩ
Unit
Unit
kV
°C
kV
kV
kV
time
22.5
22.5
37.5
50.0
Ω
Ω
Ω
t
µs
off