TCDT1110 Vishay, TCDT1110 Datasheet - Page 3

• Manufacturer Part Number: TCDT1110
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR > 100%
• Manufacturer: Vishay

Specifications of TCDT1110

• Isolation Voltage: 3750 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Input Current Max: 50mA
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 83531
Rev. 1.8, 16-May-08
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
SWITCHING CHARACTERISTICS
PARAMETER
Turn-off time
Turn-on time
Turn-off time
Turn-on time
95 10889
95 10934
0
R
t
T
p
t
G
p
Fig. 5 - Test Circuit, Non-Saturated Operation
= 0.01
= 50 µs
300
250
200
150
100
= 50
50
0
0
I
F
50
25
I
I
si
T
Fig. 3 - Derating diagram
F
(mA)
amb
P
50
si
- Ambeint Temperature(°C)
(mW)
100
75
100 125 150 175 200
I
+ 10 V
V
V
C
Channel II
Channel I
For technical questions, contact: [e-mail]
S
S
= 2 mA; adjusted through
V
V
= 10 V, I
= 10 V, I
R
R
IO
IO
L
L
V
V
t
Tr
= 500 V, T
= 500 V, T
TEST CONDITION
TEST CONDITION
= 100 Ω (see figure 3)
= 100 Ω (see figure 3)
S
S
(construction test only)
100 %, t
= 60 s, t
= 10 V, I
= 10 V, I
(see figure 2)
(see figure 4)
(see figure 4)
input amplitude
V
F
F
IO
Optocoupler, Phototransistor
= 10 mA, R
= 10 mA, R
Oscilloscope
R
C
= 500 V
L
L
test
test
amb
amb
C
C
1 M
20 pF
= 2 mA,
= 2 mA,
= 1 s
= 10 s,
= 100 °C
= 200 °C
L
L
= 1 kΩ
= 1 kΩ
Output
SYMBOL
SYMBOL
V
V
V
R
R
R
IOTM
t
t
t
t
95 10898
off
on
off
on
pd
pd
IO
IO
IO
Fig. 4 - Test Pulse Diagram for Sample Test According to
13930
V
V
V
IOWM
IOTM
IORM
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
0
R
V
t
T
p
t
Pd
G
p
Fig. 6 - Test Circuit, Saturated Operation
0
= 0.01
= 50 µs
= 50
MIN.
MIN.
10
10
10
1.6
1.3
t
6
I
1
F
12
11
TCDT1110/TCDT1110G
9
50
I
F
= 10 mA
Vishay Semiconductors
t
t
t
1
3
stres
t
, t
test
, t
TYP.
TYP.
15.0
15.0
18.0
2
4
t
Tr
9.0
= 1 to 10 s
= 1 s
= 10 s
= 12 s
1 k
= 60 s
I
+ 10 V
C
Channel II
Channel I
MAX.
MAX.
t
2
www.vishay.com
t
3
Oscilloscope
R
C
t
t
test
stres
L
L
t
t
1 M
20 pF
4
UNIT
UNIT
kV
kV
kV
µs
µs
µs
µs
Ω
Ω
Ω
785