TGA4516 TriQuint, TGA4516 Datasheet - Page 9

• Manufacturer Part Number: TGA4516
• Description: RF Amplifier 30-40 GHz 2W HPA
• Manufacturer: TriQuint
• Type: Power Amplifierr

Specifications of TGA4516

• Operating Frequency: 30 GHz to 40 GHz
• P1db: 33 dBm
• Operating Supply Voltage: 6.5 V
• Supply Current: 3 A
• Maximum Power Dissipation: 12.7 W
• Package / Case: 2.79 mm x 2.315 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1029845

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Component placement and adhesive attachment assembly notes:
Interconnect process assembly notes:
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TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
An alloy station or conveyor furnace with reducing atmosphere should be used.
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200°C.
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C (30 seconds max).
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Assembly Process Notes
May 2009 © Rev -
TGA4516
9