1N3879 GeneSiC Semiconductor, 1N3879 Datasheet
1N3879
Manufacturer Part Number
1N3879
Description
Rectifiers 50V 6A Fast Recovery
Manufacturer
GeneSiC Semiconductor
Datasheet
1.1N3883.pdf
(2 pages)
Specifications of 1N3879
Product
Fast Recovery Rectifier
Reverse Voltage
50 V
Forward Voltage Drop
1.4 V
Recovery Time
200 ns
Forward Continuous Current
6 A
Max Surge Current
90 A
Reverse Current Ir
15 uA
Mounting Style
Through Hole
Package / Case
DO-4
Rohs Compliant
Yes
Diode Type
Fast Recovery
Repetitive Reverse Voltage Vrrm Max
50V
Forward Current If(av)
6A
Forward Voltage Vf Max
1.4V
Reverse Recovery Time Trr Max
200ns
Forward Surge Current Ifsm Max
90A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.genesicsemi.com
Features
• High Surge Capability
• Types up to 400 V V
Maximum ratings, at T
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Recovery Time
Maximum reverse recovery
time
Thermal characteristics
Thermal resistance, junction
- case
Silicon Fast
Recovery Diode
p
Parameter
p
RRM
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Symbol
V
V
V
R
I
V
T
T
F,SM
V
RRM
RMS
I
I
T
thJC
RR
DC
stg
R
F
F
j
T
V
V
C
R
I
I
R
F
F
= 25 °C, t
= 50 V, T
=0.5 A, I
= 50 V, T
= 6 A, T
Conditions
T
Conditions
I
RR
C
≤ 100 °C
= 0.25 A
j
R
p
j
= 25 °C
j
=1.0 A,
= 150 °C
= 8.3 ms
= 25 °C
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R)
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R)
-65 to 150
-65 to 175
1
200
1.4
2.5
50
50
35
50
90
15
6
3
-65 to 150
-65 to 175
100
100
100
200
1.4
2.5
70
90
15
6
3
1N3879 thru 1N3883R
V
I
F
-65 to 150
-65 to 175
RRM
= 6 A
200
200
140
200
200
1.4
2.5
90
15
6
3
= 50 V - 400 V
DO-4 Package
-65 to 150
-65 to 175
300
300
210
300
200
1.4
2.5
90
15
6
3
1N3883 (R)
1N3883 (R)
-65 to 150
-65 to 175
400
400
280
400
200
1.4
2.5
90
15
6
3
°C/W
Unit
Unit
mA
μA
nS
°C
°C
V
V
V
V
A
A
V
Related parts for 1N3879
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Rectifiers 200V 200A Super Fast Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Rectifiers 400V 200A Super Fast Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Rectifiers 400V 200A Super Fast Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Rectifiers 100V 200A Super Fast Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Rectifiers 200V 200A Super Fast Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Schottky (Diodes & Rectifiers) 40V 600A Schottky Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Schottky (Diodes & Rectifiers) 60V 200A Schottky Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Schottky (Diodes & Rectifiers) 45V 300A Schottky Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Schottky (Diodes & Rectifiers) 30V 200A Schottky Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Schottky (Diodes & Rectifiers) 60V 300A Schottky Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Schottky (Diodes & Rectifiers) 45V 120A Schottky Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
Schottky (Diodes & Rectifiers) 45V 200A Schottky Recovery
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
BRIDGE RECTIFIER, 400V, 1A, DB
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
BRIDGE RECTIFIER, 1000V, 1A, DB
Manufacturer:
GeneSiC Semiconductor
Datasheet:
Part Number:
Description:
BRIDGE RECTIFIER, 600V, 1.5A, WOM
Manufacturer:
GeneSiC Semiconductor
Datasheet:
1N3879 Summary of contents
Page 1
... Operating temperature T Storage temperature Electrical characteristics °C, unless otherwise specified Parameter Symbol Diode forward voltage Reverse current Recovery Time Maximum reverse recovery T time Thermal characteristics Thermal resistance, junction R - case www.genesicsemi.com Conditions 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 ( RRM 35 RMS ≤ 100 ° ° 8 ...
Page 2
... www.genesicsemi.com 1N3879 thru 1N3883R 2 ...